Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice

Ray Ming Lin; Si Chen Lee; Hao Hsiung Lin; Yuan Tung Dai; Yang Fang Chen

doi:10.1016/S0022-0248(01)00983-6

Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice

Ray Ming Lin^*, Si Chen Lee, Hao Hsiung Lin, Yuan Tung Dai, Yang Fang Chen

^*Corresponding author for this work

Department of Electronic Engineering

National Taiwan University

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

We have observed a temperature insensitive and an unusual blueshift of photoluminescence peak energy in ten periods self-organized InAs quantum dots superlattice. The net temperature dependence of PL wavelength for samples with 3, 4 and 5 monolayer ten periods InAs quantum dots superlattice, respectively, are 0.15, 0.13 and-0.17 nm/°C, respectively. The temperature dependence of the InAs quantum dots shows a significantly different trend when the InAs layer thickness is smaller (redshift) or larger (blueshift) than around 4 ML.

Original language	English
Pages (from-to)	1034-1038
Number of pages	5
Journal	Journal of Crystal Growth
Volume	227-228
DOIs	https://doi.org/10.1016/S0022-0248(01)00983-6
State	Published - 07 2001
Event	11th International Conference on Molecular Beam Epitaxy - Bijing, China Duration: 11 09 2000 → 15 09 2000

Keywords

A1. Quantum dots
A3. Molecular beam epitaxy
B2. Semiconducting indium compounds
B3. Nonlinear optical devices

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10.1016/S0022-0248(01)00983-6

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title = "Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice",

abstract = "We have observed a temperature insensitive and an unusual blueshift of photoluminescence peak energy in ten periods self-organized InAs quantum dots superlattice. The net temperature dependence of PL wavelength for samples with 3, 4 and 5 monolayer ten periods InAs quantum dots superlattice, respectively, are 0.15, 0.13 and-0.17 nm/°C, respectively. The temperature dependence of the InAs quantum dots shows a significantly different trend when the InAs layer thickness is smaller (redshift) or larger (blueshift) than around 4 ML.",

keywords = "A1. Quantum dots, A3. Molecular beam epitaxy, B2. Semiconducting indium compounds, B3. Nonlinear optical devices",

author = "Lin, {Ray Ming} and Lee, {Si Chen} and Lin, {Hao Hsiung} and Dai, {Yuan Tung} and Chen, {Yang Fang}",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00983-6",

language = "英语",

volume = "227-228",

pages = "1034--1038",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

note = "11th International Conference on Molecular Beam Epitaxy ; Conference date: 11-09-2000 Through 15-09-2000",

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TY - JOUR

T1 - Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice

AU - Lin, Ray Ming

AU - Lee, Si Chen

AU - Lin, Hao Hsiung

AU - Dai, Yuan Tung

AU - Chen, Yang Fang

PY - 2001/7

Y1 - 2001/7

N2 - We have observed a temperature insensitive and an unusual blueshift of photoluminescence peak energy in ten periods self-organized InAs quantum dots superlattice. The net temperature dependence of PL wavelength for samples with 3, 4 and 5 monolayer ten periods InAs quantum dots superlattice, respectively, are 0.15, 0.13 and-0.17 nm/°C, respectively. The temperature dependence of the InAs quantum dots shows a significantly different trend when the InAs layer thickness is smaller (redshift) or larger (blueshift) than around 4 ML.

AB - We have observed a temperature insensitive and an unusual blueshift of photoluminescence peak energy in ten periods self-organized InAs quantum dots superlattice. The net temperature dependence of PL wavelength for samples with 3, 4 and 5 monolayer ten periods InAs quantum dots superlattice, respectively, are 0.15, 0.13 and-0.17 nm/°C, respectively. The temperature dependence of the InAs quantum dots shows a significantly different trend when the InAs layer thickness is smaller (redshift) or larger (blueshift) than around 4 ML.

KW - A1. Quantum dots

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting indium compounds

KW - B3. Nonlinear optical devices

UR - http://www.scopus.com/inward/record.url?scp=0035398745&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)00983-6

DO - 10.1016/S0022-0248(01)00983-6

M3 - 会议文章

AN - SCOPUS:0035398745

SN - 0022-0248

VL - 227-228

SP - 1034

EP - 1038

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - 11th International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -

Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice

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