Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion

R. D. Chang; P. S. Choi; D. L. Kwong; D. Wristers; P. K. Chu

doi:10.1063/1.121159

Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion

R. D. Chang^*, P. S. Choi, D. L. Kwong, D. Wristers, P. K. Chu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

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Abstract

Boron segregation in an implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It was found that both the implant damage created by arsenic implantation and arsenic deactivation enhance the diffusion of the embedded boron layer toward the shallow As implanted profile. The segregation phenomenon was observed in both 650°C furnace annealed (FA) and 1000°C rapid thermally annealed (RTA) samples. For the 650°C FA sample, the boron segregation peak was located at the junction formed by implanted As, where residual dislocation loops at the original amorphous/crystalline (a/c) interface were also observed. However, no a/c interface dislocation loops were found to be present for the RTA samples. Additional anomalous boron segregation was observed for the 1000°C RTA+750°CFA samples. The additional boron segregation is not correlated with defect layers. It is, therefore, concluded that the anomalous boron segregation is caused by the electric field resulting from the formation of a p-n junction.

Original language	English
Pages (from-to)	1709-1711
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	14
DOIs	https://doi.org/10.1063/1.121159
State	Published - 1998
Externally published	Yes

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title = "Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion",

abstract = "Boron segregation in an implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It was found that both the implant damage created by arsenic implantation and arsenic deactivation enhance the diffusion of the embedded boron layer toward the shallow As implanted profile. The segregation phenomenon was observed in both 650°C furnace annealed (FA) and 1000°C rapid thermally annealed (RTA) samples. For the 650°C FA sample, the boron segregation peak was located at the junction formed by implanted As, where residual dislocation loops at the original amorphous/crystalline (a/c) interface were also observed. However, no a/c interface dislocation loops were found to be present for the RTA samples. Additional anomalous boron segregation was observed for the 1000°C RTA+750°CFA samples. The additional boron segregation is not correlated with defect layers. It is, therefore, concluded that the anomalous boron segregation is caused by the electric field resulting from the formation of a p-n junction.",

author = "Chang, {R. D.} and Choi, {P. S.} and Kwong, {D. L.} and D. Wristers and Chu, {P. K.}",

year = "1998",

doi = "10.1063/1.121159",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion

AU - Chang, R. D.

AU - Choi, P. S.

AU - Kwong, D. L.

AU - Wristers, D.

AU - Chu, P. K.

PY - 1998

Y1 - 1998

N2 - Boron segregation in an implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It was found that both the implant damage created by arsenic implantation and arsenic deactivation enhance the diffusion of the embedded boron layer toward the shallow As implanted profile. The segregation phenomenon was observed in both 650°C furnace annealed (FA) and 1000°C rapid thermally annealed (RTA) samples. For the 650°C FA sample, the boron segregation peak was located at the junction formed by implanted As, where residual dislocation loops at the original amorphous/crystalline (a/c) interface were also observed. However, no a/c interface dislocation loops were found to be present for the RTA samples. Additional anomalous boron segregation was observed for the 1000°C RTA+750°CFA samples. The additional boron segregation is not correlated with defect layers. It is, therefore, concluded that the anomalous boron segregation is caused by the electric field resulting from the formation of a p-n junction.

AB - Boron segregation in an implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It was found that both the implant damage created by arsenic implantation and arsenic deactivation enhance the diffusion of the embedded boron layer toward the shallow As implanted profile. The segregation phenomenon was observed in both 650°C furnace annealed (FA) and 1000°C rapid thermally annealed (RTA) samples. For the 650°C FA sample, the boron segregation peak was located at the junction formed by implanted As, where residual dislocation loops at the original amorphous/crystalline (a/c) interface were also observed. However, no a/c interface dislocation loops were found to be present for the RTA samples. Additional anomalous boron segregation was observed for the 1000°C RTA+750°CFA samples. The additional boron segregation is not correlated with defect layers. It is, therefore, concluded that the anomalous boron segregation is caused by the electric field resulting from the formation of a p-n junction.

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EP - 1711

JO - Applied Physics Letters

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Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion

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