Abstract
Boron segregation toward implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It is found that both the implant damage created by the arsenic implantation and arsenic deactivation enhance the diffusion of the embedded boron layer toward the shallow As implanted profile. This phenomena was found in both 650°C furnace annealed (FA) and 1000°C rapid thermally annealed (RTA) samples. For the 650°C FA sample, the boron segregation peak was found located at the junction formed by implanted As, where residual dislocation loops at the original amorphous/crystalline (A/C) interface was also observed. However, no A/C interface dislocation loops were found to be present for the RTA samples. Additional anomalous boron segregation was observed for the 1000°C RTA + 750°C FA samples. The additional boron segregation is not correlated with defect layers. It is, therefore, concluded that the anomalous boron segregation is caused by the electric field resulting from the formation of p-n junction.
| Original language | English |
|---|---|
| Pages (from-to) | 296-303 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3212 |
| DOIs | |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Microelectronic Device Technology - Austin, TX, United States Duration: 01 10 1997 → 01 10 1997 |
Keywords
- Arsenic deactivation
- Boron segregation
- Dislocation
- Electric field
- Ion implantation
- Transient enhanced diffusion