Brightness improvement and limited forward voltage of the AlGaInP MQW LED with wet-oxidation by Taguchi method

Ray Ming Lin*, Jen Chih Li, Tzer En Nee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

To increase the external quantum efficiency of LED while limiting its forward voltage (Vf), we prepared both (AlxGa 1-x)0.5In0.5P LED and buried oxides through selective wet oxidation of the AlAs layers of AlAs/GaAs distributed Bragg reflectors (DBRs). The wet oxidation process forms a stable AlxO material that acts as an insulation layer that affects both the carrier and optical confinements. The stable AlxO material that formed confined the transport region of injection carriers effectively and strongly decreased the chance of the carrier being trapped within the surface layer. To determine the trade-off conditions for LED oxidation, we used the Taguchi method which is a robust technique that is often used to analyze the significant trends that occur under a set of oxidation condition. In this study we uses an L9 orthogonal array to measure the effects that a series of factors have upon the maximum brightness performance of the LED in an effort to limit the values of Vf. Relative to the as-grown LED, the oxidized LED that was treated under the trade-off wet-oxidation conditions displayed a sharply enhance the brightness (62.4% increase) in conjunction with only a slightly increased value of Vf (only a 24.5% increase).

Original languageEnglish
Title of host publicationNanoSingapore 2006
Subtitle of host publicationIEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Pages245-248
Number of pages4
DOIs
StatePublished - 2006
Event2006 IEEE Conference on Emerging Technologies - Nanoelectronics - Singapore, Singapore
Duration: 10 01 200613 01 2006

Publication series

NameNanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Volume2006

Conference

Conference2006 IEEE Conference on Emerging Technologies - Nanoelectronics
Country/TerritorySingapore
CitySingapore
Period10/01/0613/01/06

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