Abstract
BSIM (Berkeley Short-channel IGFET Model), a simple and accurate short-channel MOSFET model, and its associated facility for IC process-oriented circuit design are described. This facility includes a fully automated parameter-extraction system and an IC process-oriented version of the SPICE circuit simulator. The autocharacterization system generates a process file which describes process and model parameters for the circuit simulator. Designers need only describe the layout geometries of devices and parasitic elements to execute circuit simulations. The BSIM model and the associated automated-characterization system have been used to analyze device characteristics from several NMOS and CMOS processes. Good agreement between measured and modeled results were obtained. The BSIM model was installed and used in the circuit simulator SPICE. Substantial improvement in the execution time for circuit simulations has been obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 433-436 |
| Number of pages | 4 |
| Journal | Proceedings - IEEE International Symposium on Circuits and Systems |
| State | Published - 1985 |
| Externally published | Yes |