Bulk-Referenced Metal-Oxide Semiconductor Transistor Modeling with BSIM: A Systematic Approach to Facilitate Symmetric Characteristics

Shao Ku Kao; Bing Sheu

doi:10.1109/MNANO.2021.3066391

Bulk-Referenced Metal-Oxide Semiconductor Transistor Modeling with BSIM: A Systematic Approach to Facilitate Symmetric Characteristics

Shao Ku Kao
, Bing Sheu

Research output: Contribution to journal › Journal Article › peer-review

Abstract

In High-Performance Radio-frequency (RF) circuits design, accurate modeling of harmonic distortion characteristics is very important. For this purpose, the bulk-referenced Berkeley Short-Channel IGFET Model (BSIM)-Bulk model is better than the source-referenced BSIM4 model in using planar metal–oxide semiconductor (MOS) technology nodes, such as the 45/40-nm node, the 32/28-nm node, and the 22/20-nm node by integrated circuit (IC) foundries, e.g., TSMC and Samsung. It can fulfill all symmetry tests. The first-order, second-order, and third-order partial derivatives of drain current with respect to drain-source voltage are continuous at <italic>V</italic>DS equal to zero.

Original language	English
Article number	9393768
Pages (from-to)	35-39
Number of pages	5
Journal	IEEE Nanotechnology Magazine
Volume	15
Issue number	3
DOIs	https://doi.org/10.1109/MNANO.2021.3066391
State	Published - 06 2021

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Publisher Copyright:
© 2007-2011 IEEE.

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title = "Bulk-Referenced Metal-Oxide Semiconductor Transistor Modeling with BSIM: A Systematic Approach to Facilitate Symmetric Characteristics",

abstract = "In High-Performance Radio-frequency (RF) circuits design, accurate modeling of harmonic distortion characteristics is very important. For this purpose, the bulk-referenced Berkeley Short-Channel IGFET Model (BSIM)-Bulk model is better than the source-referenced BSIM4 model in using planar metal–oxide semiconductor (MOS) technology nodes, such as the 45/40-nm node, the 32/28-nm node, and the 22/20-nm node by integrated circuit (IC) foundries, e.g., TSMC and Samsung. It can fulfill all symmetry tests. The first-order, second-order, and third-order partial derivatives of drain current with respect to drain-source voltage are continuous at VDS equal to zero.",

author = "Kao, \{Shao Ku\} and Bing Sheu",

note = "Publisher Copyright: {\textcopyright} 2007-2011 IEEE.",

year = "2021",

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doi = "10.1109/MNANO.2021.3066391",

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PY - 2021/6

Y1 - 2021/6

N2 - In High-Performance Radio-frequency (RF) circuits design, accurate modeling of harmonic distortion characteristics is very important. For this purpose, the bulk-referenced Berkeley Short-Channel IGFET Model (BSIM)-Bulk model is better than the source-referenced BSIM4 model in using planar metal–oxide semiconductor (MOS) technology nodes, such as the 45/40-nm node, the 32/28-nm node, and the 22/20-nm node by integrated circuit (IC) foundries, e.g., TSMC and Samsung. It can fulfill all symmetry tests. The first-order, second-order, and third-order partial derivatives of drain current with respect to drain-source voltage are continuous at VDS equal to zero.

AB - In High-Performance Radio-frequency (RF) circuits design, accurate modeling of harmonic distortion characteristics is very important. For this purpose, the bulk-referenced Berkeley Short-Channel IGFET Model (BSIM)-Bulk model is better than the source-referenced BSIM4 model in using planar metal–oxide semiconductor (MOS) technology nodes, such as the 45/40-nm node, the 32/28-nm node, and the 22/20-nm node by integrated circuit (IC) foundries, e.g., TSMC and Samsung. It can fulfill all symmetry tests. The first-order, second-order, and third-order partial derivatives of drain current with respect to drain-source voltage are continuous at VDS equal to zero.

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ER -

Bulk-Referenced Metal-Oxide Semiconductor Transistor Modeling with BSIM: A Systematic Approach to Facilitate Symmetric Characteristics

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