Abstract
The sputtering rate during a plasma-assisted process was calculated. Monte Carlo simulation was used for the calculation. It was observed that sputtering was one of the most important mechanisms occurring on the cathod during a plasma-assisted process.
Original language | English |
---|---|
Pages (from-to) | 1125-1126 |
Number of pages | 2 |
Journal | Journal of Materials Science Letters |
Volume | 22 |
Issue number | 16 |
DOIs | |
State | Published - 15 08 2003 |
Externally published | Yes |