Abstract
The sputtering rate during a plasma-assisted process was calculated. Monte Carlo simulation was used for the calculation. It was observed that sputtering was one of the most important mechanisms occurring on the cathod during a plasma-assisted process.
| Original language | English |
|---|---|
| Pages (from-to) | 1125-1126 |
| Number of pages | 2 |
| Journal | Journal of Materials Science Letters |
| Volume | 22 |
| Issue number | 16 |
| DOIs | |
| State | Published - 15 08 2003 |
| Externally published | Yes |
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