Calculation of Sputtering Rate during a Plasma-Assisted Process

Jang Hsing Hsieh; Chuan Li

doi:10.1143/jjap.42.5295

Calculation of Sputtering Rate during a Plasma-Assisted Process

Jang Hsing Hsieh^*, Chuan Li

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Journal Article › peer-review

12 Scopus citations

Abstract

An attempt was made to calculate the sputtering rate of a cathode during a plasma-assisted deposition or etching process. In this attempt, an approach combining sputtering models and Monte Carlo simulation was developed. By using a Cr target as an example, the approach was shown to be satisfactory.

Original language	English
Pages (from-to)	5295-5298
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	8
DOIs	https://doi.org/10.1143/jjap.42.5295
State	Published - 08 2003
Externally published	Yes

Keywords

Cr thin film
Monte Carlo simulation
Sputtering rate

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10.1143/jjap.42.5295

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title = "Calculation of Sputtering Rate during a Plasma-Assisted Process",

abstract = "An attempt was made to calculate the sputtering rate of a cathode during a plasma-assisted deposition or etching process. In this attempt, an approach combining sputtering models and Monte Carlo simulation was developed. By using a Cr target as an example, the approach was shown to be satisfactory.",

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author = "Hsieh, \{Jang Hsing\} and Chuan Li",

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KW - Cr thin film

KW - Monte Carlo simulation

KW - Sputtering rate

UR - https://www.scopus.com/pages/publications/0142075813

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DO - 10.1143/jjap.42.5295

M3 - 文章

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EP - 5298

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ER -

Calculation of Sputtering Rate during a Plasma-Assisted Process

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Keywords

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