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Calculation of Sputtering Rate during a Plasma-Assisted Process

  • Jang Hsing Hsieh*
  • , Chuan Li
  • *Corresponding author for this work
  • Nanyang Technological University

Research output: Contribution to journal › Journal Article › peer-review

12 Scopus citations

Abstract

An attempt was made to calculate the sputtering rate of a cathode during a plasma-assisted deposition or etching process. In this attempt, an approach combining sputtering models and Monte Carlo simulation was developed. By using a Cr target as an example, the approach was shown to be satisfactory.

Original languageEnglish
Pages (from-to)5295-5298
Number of pages4
JournalJapanese Journal of Applied Physics
Volume42
Issue number8
DOIs
StatePublished - 08 2003
Externally publishedYes

Keywords

  • Cr thin film
  • Monte Carlo simulation
  • Sputtering rate

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