Calibration 90 nm node RF mosfets, including stress degradation

H. L. Kao; C. H. Kao; A. Chin; C. C. Liao

doi:10.1002/mop.22209

Calibration 90 nm node RF mosfets, including stress degradation

H. L. Kao^*, C. H. Kao, A. Chin, C. C. Liao

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

Using a microstrip line layout, a low minimum noise figure (NF _min) of 0.51 dB, at 10 GHz, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NF_min was located at the peak f_T of 152 GHz, coinciding with the peak transconductance (g _m). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NF_min results was developed, including the changes after hot-carrier stress.

Original language	English
Pages (from-to)	604-607
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	49
Issue number	3
DOIs	https://doi.org/10.1002/mop.22209
State	Published - 03 2007

Keywords

MOSFETs
Model
NF
Stress
f

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10.1002/mop.22209

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title = "Calibration 90 nm node RF mosfets, including stress degradation",

abstract = "Using a microstrip line layout, a low minimum noise figure (NF min) of 0.51 dB, at 10 GHz, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NFmin was located at the peak fT of 152 GHz, coinciding with the peak transconductance (g m). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NFmin results was developed, including the changes after hot-carrier stress.",

keywords = "MOSFETs, Model, NF, Stress, f",

author = "Kao, {H. L.} and Kao, {C. H.} and A. Chin and Liao, {C. C.}",

year = "2007",

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TY - JOUR

T1 - Calibration 90 nm node RF mosfets, including stress degradation

AU - Kao, H. L.

AU - Kao, C. H.

AU - Chin, A.

AU - Liao, C. C.

PY - 2007/3

Y1 - 2007/3

N2 - Using a microstrip line layout, a low minimum noise figure (NF min) of 0.51 dB, at 10 GHz, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NFmin was located at the peak fT of 152 GHz, coinciding with the peak transconductance (g m). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NFmin results was developed, including the changes after hot-carrier stress.

AB - Using a microstrip line layout, a low minimum noise figure (NF min) of 0.51 dB, at 10 GHz, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NFmin was located at the peak fT of 152 GHz, coinciding with the peak transconductance (g m). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NFmin results was developed, including the changes after hot-carrier stress.

KW - MOSFETs

KW - Model

KW - NF

KW - Stress

KW - f

UR - http://www.scopus.com/inward/record.url?scp=33847721454&partnerID=8YFLogxK

U2 - 10.1002/mop.22209

DO - 10.1002/mop.22209

M3 - 文章

AN - SCOPUS:33847721454

SN - 0895-2477

VL - 49

SP - 604

EP - 607

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 3

ER -

Calibration 90 nm node RF mosfets, including stress degradation

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Keywords

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