Capacitance swing and capacitance ratio of GaN-based Metal-Semiconductor-Metal Two-Dimensional electron gas varactor with different dielectric films

Chu Yeh Tien, Ping Yu Kuei*, Liann Be Chang, Chien Pin Hsu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

1 Scopus citations

Abstract

The performance of the AlGaN/GaN MSM-2DEG varactor with different dielectric films deposited by the E-beam deposition is investigated in detail. The capacitance swing and the capacitance ratio of the varactor without dielectric film as well as with, SiO2, Gd 2O 3, and Si3N 4 films, respectively, are determined by electrodes of varying areas. The maximum capacitance, the minimum capacitance and the capacitance ratios are proportional to the increasing of the electrode areas. The capacitance ratio determined by the maximum and the minimum capacitance is found to be 18.35 (with Si3N 4 dielectric film) and 149.51 (without dielectric film), respectively. The transition voltages of the fabricated varactors are almost the same for a bias voltage of about ±5 V and leakage current can be lower three orders of magnitude while the varactors with dielectric films. The tunability of the capacitance ratio makes the AlGaN/GaN MSM-2DEG varactor with a dielectric film highly useful in multirange applications of a surge free preamplier.

Original languageEnglish
Pages (from-to)1721-1726
Number of pages6
JournalJournal of Electrical Engineering and Technology
Volume10
Issue number4
DOIs
StatePublished - 01 07 2015

Bibliographical note

Publisher Copyright:
© 2015 The Korean Institute of Electrical Engineers.

Keywords

  • 2DEG
  • Capacitance ratio
  • MSM
  • Varactor

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