Carrier mobility characteristics and negative bias temperature instability reliability in strained-Si p-type metal-oxide-semiconductor field-effect transistors

Tung Ming Pan

doi:10.1149/1.2357984

Carrier mobility characteristics and negative bias temperature instability reliability in strained-Si p-type metal-oxide-semiconductor field-effect transistors

Tung Ming Pan^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

Surface-channel p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) processed on the strained-Si/relaxed- SiGe substrate feature significantly enhanced hole mobility (45%) compared to the unstrained-Si control device. Analysis of the mobility characteristics shows that surface roughness scattering for strained-Si pMOSFETs begins to dominate at a relatively low effective field (∼0.1 MVcm) and thus limits the drive current enhancement. In addition, experimental data indicate that negative bias temperature instability is a potential reliability concern for strained-Si pMOSFETs.

Original language	English
Pages (from-to)	351-353
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	12
DOIs	https://doi.org/10.1149/1.2357984
State	Published - 2006

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title = "Carrier mobility characteristics and negative bias temperature instability reliability in strained-Si p-type metal-oxide-semiconductor field-effect transistors",

abstract = "Surface-channel p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) processed on the strained-Si/relaxed- SiGe substrate feature significantly enhanced hole mobility (45\%) compared to the unstrained-Si control device. Analysis of the mobility characteristics shows that surface roughness scattering for strained-Si pMOSFETs begins to dominate at a relatively low effective field (∼0.1 MVcm) and thus limits the drive current enhancement. In addition, experimental data indicate that negative bias temperature instability is a potential reliability concern for strained-Si pMOSFETs.",

author = "Pan, \{Tung Ming\}",

year = "2006",

doi = "10.1149/1.2357984",

language = "英语",

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pages = "351--353",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

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T1 - Carrier mobility characteristics and negative bias temperature instability reliability in strained-Si p-type metal-oxide-semiconductor field-effect transistors

AU - Pan, Tung Ming

PY - 2006

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N2 - Surface-channel p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) processed on the strained-Si/relaxed- SiGe substrate feature significantly enhanced hole mobility (45%) compared to the unstrained-Si control device. Analysis of the mobility characteristics shows that surface roughness scattering for strained-Si pMOSFETs begins to dominate at a relatively low effective field (∼0.1 MVcm) and thus limits the drive current enhancement. In addition, experimental data indicate that negative bias temperature instability is a potential reliability concern for strained-Si pMOSFETs.

AB - Surface-channel p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) processed on the strained-Si/relaxed- SiGe substrate feature significantly enhanced hole mobility (45%) compared to the unstrained-Si control device. Analysis of the mobility characteristics shows that surface roughness scattering for strained-Si pMOSFETs begins to dominate at a relatively low effective field (∼0.1 MVcm) and thus limits the drive current enhancement. In addition, experimental data indicate that negative bias temperature instability is a potential reliability concern for strained-Si pMOSFETs.

UR - https://www.scopus.com/pages/publications/33750448613

U2 - 10.1149/1.2357984

DO - 10.1149/1.2357984

M3 - 文章

AN - SCOPUS:33750448613

SN - 1099-0062

VL - 9

SP - 351

EP - 353

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

ER -

Carrier mobility characteristics and negative bias temperature instability reliability in strained-Si p-type metal-oxide-semiconductor field-effect transistors

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