Carrier transportation of rapid thermal annealed CeO2 gate dielectrics

Jer Chyi Wang; Kuo Cheng Chiang; Tan Fu Lei; Chung Len Lee

doi:10.1149/1.1819855

Carrier transportation of rapid thermal annealed CeO₂ gate dielectrics

Jer Chyi Wang^*, Kuo Cheng Chiang, Tan Fu Lei, Chung Len Lee

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

26 Scopus citations

Abstract

We investigated the carrier transportation of ultrathin CeO₂ gate dielectrics with rapid thermal annealing (RTA). After annealing, the effective oxide thickness was decreased and the characteristics were significantly improved. Temperature dependence of gate leakage current was studied and Frenkel-Poole dominated the conduction mechanism for low RTA temperature. As the annealing temperature increases, Fowler-Nordheim tunneling became much more important and the CeO₂ /n-Si electron barrier height of 0.75 eV was extracted for future modeling and simulation. In addition, the energy band diagram of Al/CeO₂ /n-Si structure was established for the first time.

Original language	English
Article number	3
Pages (from-to)	E55-E57
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	12
DOIs	https://doi.org/10.1149/1.1819855
State	Published - 2004
Externally published	Yes

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@article{5a077b28d38543d082ad4348abfa0bf8,

title = "Carrier transportation of rapid thermal annealed CeO2 gate dielectrics",

abstract = "We investigated the carrier transportation of ultrathin CeO2 gate dielectrics with rapid thermal annealing (RTA). After annealing, the effective oxide thickness was decreased and the characteristics were significantly improved. Temperature dependence of gate leakage current was studied and Frenkel-Poole dominated the conduction mechanism for low RTA temperature. As the annealing temperature increases, Fowler-Nordheim tunneling became much more important and the CeO2 /n-Si electron barrier height of 0.75 eV was extracted for future modeling and simulation. In addition, the energy band diagram of Al/CeO2 /n-Si structure was established for the first time.",

author = "Wang, {Jer Chyi} and Chiang, {Kuo Cheng} and Lei, {Tan Fu} and Lee, {Chung Len}",

year = "2004",

doi = "10.1149/1.1819855",

language = "英语",

volume = "7",

pages = "E55--E57",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "12",

}

TY - JOUR

T1 - Carrier transportation of rapid thermal annealed CeO2 gate dielectrics

AU - Wang, Jer Chyi

AU - Chiang, Kuo Cheng

AU - Lei, Tan Fu

AU - Lee, Chung Len

PY - 2004

Y1 - 2004

N2 - We investigated the carrier transportation of ultrathin CeO2 gate dielectrics with rapid thermal annealing (RTA). After annealing, the effective oxide thickness was decreased and the characteristics were significantly improved. Temperature dependence of gate leakage current was studied and Frenkel-Poole dominated the conduction mechanism for low RTA temperature. As the annealing temperature increases, Fowler-Nordheim tunneling became much more important and the CeO2 /n-Si electron barrier height of 0.75 eV was extracted for future modeling and simulation. In addition, the energy band diagram of Al/CeO2 /n-Si structure was established for the first time.

AB - We investigated the carrier transportation of ultrathin CeO2 gate dielectrics with rapid thermal annealing (RTA). After annealing, the effective oxide thickness was decreased and the characteristics were significantly improved. Temperature dependence of gate leakage current was studied and Frenkel-Poole dominated the conduction mechanism for low RTA temperature. As the annealing temperature increases, Fowler-Nordheim tunneling became much more important and the CeO2 /n-Si electron barrier height of 0.75 eV was extracted for future modeling and simulation. In addition, the energy band diagram of Al/CeO2 /n-Si structure was established for the first time.

UR - http://www.scopus.com/inward/record.url?scp=10944272655&partnerID=8YFLogxK

U2 - 10.1149/1.1819855

DO - 10.1149/1.1819855

M3 - 文章

AN - SCOPUS:10944272655

SN - 1099-0062

VL - 7

SP - E55-E57

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

M1 - 3

ER -

Carrier transportation of rapid thermal annealed CeO₂ gate dielectrics

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