Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy

C. K. Chao; J. I. Chyi; C. N. Hsiao; C. C. Kei; S. Y. Kuo; H. S. Chang; T. M. Hsu

doi:10.1063/1.2210296

Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy

C. K. Chao^*
, J. I. Chyi
, C. N. Hsiao
, C. C. Kei
, S. Y. Kuo
, H. S. Chang
, T. M. Hsu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

34 Scopus citations

Abstract

We demonstrate the growth of indium nitride (InN) nanorods on sapphire by chemical-beam epitaxy without a catalyst. The nanorods are synthesized nearly unidirectionally along the 〈001〉 direction and the diameters varied in the range of 20-40 nm with InN flow ratio. Single-crystalline wurtzite structure is verified by x-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN nanorods have sharp peaks E2 (high) at 491 cm-1 and A1 (LO) at 593 cm-1.

Original language	English
Article number	233111
Journal	Applied Physics Letters
Volume	88
Issue number	23
DOIs	https://doi.org/10.1063/1.2210296
State	Published - 05 06 2006
Externally published	Yes

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title = "Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy",

abstract = "We demonstrate the growth of indium nitride (InN) nanorods on sapphire by chemical-beam epitaxy without a catalyst. The nanorods are synthesized nearly unidirectionally along the 〈001〉 direction and the diameters varied in the range of 20-40 nm with InN flow ratio. Single-crystalline wurtzite structure is verified by x-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN nanorods have sharp peaks E2 (high) at 491 cm-1 and A1 (LO) at 593 cm-1.",

author = "Chao, \{C. K.\} and Chyi, \{J. I.\} and Hsiao, \{C. N.\} and Kei, \{C. C.\} and Kuo, \{S. Y.\} and Chang, \{H. S.\} and Hsu, \{T. M.\}",

year = "2006",

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doi = "10.1063/1.2210296",

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T1 - Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy

AU - Chao, C. K.

AU - Chyi, J. I.

AU - Hsiao, C. N.

AU - Kei, C. C.

AU - Kuo, S. Y.

AU - Chang, H. S.

AU - Hsu, T. M.

PY - 2006/6/5

Y1 - 2006/6/5

N2 - We demonstrate the growth of indium nitride (InN) nanorods on sapphire by chemical-beam epitaxy without a catalyst. The nanorods are synthesized nearly unidirectionally along the 〈001〉 direction and the diameters varied in the range of 20-40 nm with InN flow ratio. Single-crystalline wurtzite structure is verified by x-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN nanorods have sharp peaks E2 (high) at 491 cm-1 and A1 (LO) at 593 cm-1.

AB - We demonstrate the growth of indium nitride (InN) nanorods on sapphire by chemical-beam epitaxy without a catalyst. The nanorods are synthesized nearly unidirectionally along the 〈001〉 direction and the diameters varied in the range of 20-40 nm with InN flow ratio. Single-crystalline wurtzite structure is verified by x-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN nanorods have sharp peaks E2 (high) at 491 cm-1 and A1 (LO) at 593 cm-1.

UR - https://www.scopus.com/pages/publications/33745014554

U2 - 10.1063/1.2210296

DO - 10.1063/1.2210296

M3 - 文章

AN - SCOPUS:33745014554

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233111

ER -

Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy

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