CF ₄ plasma effect combined with rapid thermal annealing for high-k Er ₂O ₃ dielectrics

In this study, the influence of the duration of CF ₄ plasma treatment of rapid thermal annealing on high-k Er ₂O ₃ dielectrics deposited on polycrystalline silicon was investigated using electrical and material analyses. Results demonstrate that Er ₂O ₃ dielectric films annealed at 800 °C and plasma treated with CF ₄ for a period of 1 min exhibited excellent dielectric performance, including a higher breakdown electric field, lower charge trapping rate, and a larger charge-to-breakdown than the as-deposited sample. Performance improvements were caused by the incorporation of fluorine atoms and the reduction of dangling bonds and defect traps.