Characteristic analysis of algan/gan hemt with composited buffer layer on high-heat dissipation poly-aln substrates

Chong Rong Huang, Hsien Chin Chiu*, Chia Hao Liu, Hsiang Chun Wang, Hsuan Ling Kao, Chih Tien Chen, Kuo Jen Chang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

5 Scopus citations

Abstract

In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (IDS) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower IDS degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.

Original languageEnglish
Article number848
JournalMembranes
Volume11
Issue number11
DOIs
StatePublished - 11 2021

Bibliographical note

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

  • Back-barrier layer
  • High thermal conductivity
  • QST substrate

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