Characteristics improvement and carrier transportation of CeO2 gate dielectrics with rapid thermal annealing

Jer Chyi Wang; Kuo Cheng Chiang; Tan Fu Lei; Chung Len Lee

Characteristics improvement and carrier transportation of CeO₂ gate dielectrics with rapid thermal annealing

Jer Chyi Wang^*, Kuo Cheng Chiang, Tan Fu Lei, Chung Len Lee

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to conference › Conference Paper › peer-review

8 Scopus citations

Abstract

In this paper, we have investigated the properties and carrier transportation of ultra-thin cerium dioxide films with rapid thermal annealing. Improved characteristics such as low leakage current, high breakdown voltage and large time-dependent-dielectric-breakdown (TDDB) are obtained owing to the more stoichiometric of the CeO₂ films after high temperature annealing. Moreover, temperature dependence of gate leakage current under substrate injection is studied, and the carrier conduction mechanisms, including the Frenkel-Poole (F-P) conduction and the Fowler-Nordheim (F-N) tunneling are also proposed, from which we have deduced the energy band diagram of A1/CeO ₂/n-Si structure for the first time.

Original language	English
Pages	161-164
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan Duration: 05 07 2004 → 08 07 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/Territory	Taiwan
Period	05/07/04 → 08/07/04

Cite this

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title = "Characteristics improvement and carrier transportation of CeO2 gate dielectrics with rapid thermal annealing",

abstract = "In this paper, we have investigated the properties and carrier transportation of ultra-thin cerium dioxide films with rapid thermal annealing. Improved characteristics such as low leakage current, high breakdown voltage and large time-dependent-dielectric-breakdown (TDDB) are obtained owing to the more stoichiometric of the CeO2 films after high temperature annealing. Moreover, temperature dependence of gate leakage current under substrate injection is studied, and the carrier conduction mechanisms, including the Frenkel-Poole (F-P) conduction and the Fowler-Nordheim (F-N) tunneling are also proposed, from which we have deduced the energy band diagram of A1/CeO 2/n-Si structure for the first time.",

author = "Wang, {Jer Chyi} and Chiang, {Kuo Cheng} and Lei, {Tan Fu} and Lee, {Chung Len}",

year = "2004",

language = "英语",

pages = "161--164",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

Characteristics improvement and carrier transportation of CeO₂ gate dielectrics with rapid thermal annealing. / Wang, Jer Chyi; Chiang, Kuo Cheng; Lei, Tan Fu et al.
2004. 161-164 Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - Characteristics improvement and carrier transportation of CeO2 gate dielectrics with rapid thermal annealing

AU - Wang, Jer Chyi

AU - Chiang, Kuo Cheng

AU - Lei, Tan Fu

AU - Lee, Chung Len

PY - 2004

Y1 - 2004

N2 - In this paper, we have investigated the properties and carrier transportation of ultra-thin cerium dioxide films with rapid thermal annealing. Improved characteristics such as low leakage current, high breakdown voltage and large time-dependent-dielectric-breakdown (TDDB) are obtained owing to the more stoichiometric of the CeO2 films after high temperature annealing. Moreover, temperature dependence of gate leakage current under substrate injection is studied, and the carrier conduction mechanisms, including the Frenkel-Poole (F-P) conduction and the Fowler-Nordheim (F-N) tunneling are also proposed, from which we have deduced the energy band diagram of A1/CeO 2/n-Si structure for the first time.

AB - In this paper, we have investigated the properties and carrier transportation of ultra-thin cerium dioxide films with rapid thermal annealing. Improved characteristics such as low leakage current, high breakdown voltage and large time-dependent-dielectric-breakdown (TDDB) are obtained owing to the more stoichiometric of the CeO2 films after high temperature annealing. Moreover, temperature dependence of gate leakage current under substrate injection is studied, and the carrier conduction mechanisms, including the Frenkel-Poole (F-P) conduction and the Fowler-Nordheim (F-N) tunneling are also proposed, from which we have deduced the energy band diagram of A1/CeO 2/n-Si structure for the first time.

UR - http://www.scopus.com/inward/record.url?scp=14844312074&partnerID=8YFLogxK

M3 - 论文

AN - SCOPUS:14844312074

SP - 161

EP - 164

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

Characteristics improvement and carrier transportation of CeO₂ gate dielectrics with rapid thermal annealing

Abstract

Conference

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