Characteristics of atomic layer deposited high-k HfAlOx nanocrystals in n-Si/SiO2/HfO2/HfAlOx/Al2O3/Pt memory capacitors

W. C. Lee, Siddheswar Maikap, J. R. Yang

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2008
Event	2008 International Electron Devices and Materials Symposia (IEDMS 2008) - Taichung,Taiwan Duration: 28 11 2008 → 29 11 2008

Conference	2008 International Electron Devices and Materials Symposia (IEDMS 2008)
Period	28/11/08 → 29/11/08

Cite this

@conference{37a238bd68564948987c1149bab6a817,

title = "Characteristics of atomic layer deposited high-k HfAlOx nanocrystals in n-Si/SiO2/HfO2/HfAlOx/Al2O3/Pt memory capacitors",

author = "Lee, {W. C.} and Siddheswar Maikap and Yang, {J. R.}",

year = "2008",

language = "American English",

note = "2008 International Electron Devices and Materials Symposia (IEDMS 2008) ; Conference date: 28-11-2008 Through 29-11-2008",

}