TY - JOUR
T1 - Characteristics of dual δ -doped InGaPInGaAs pHEMTs with various doping profiles
AU - Chiu, Hsien Chin
AU - Chen, Chao Hung
AU - Yang, Chih Wei
AU - Lin, Che Kai
PY - 2009
Y1 - 2009
N2 - Dual δ -doped InGaPInGaAs pseudomorphic high electron mobility transistors (pHEMTs) with various doping profile designs were adopted to investigate the relationship between the doping profile of pHEMTs and the surface phenomena. Compared to a single δ -doped pHEMT, the dual δ -doped design provided a high current density, which was suitable for low noise and high power applications [IEEE Trans. Electron Devices, 35, 879 (1988); J. Appl. Phys., 81, 3576 (1997)]. The influence of the δ -doped layer in GaAs Schottky diode parameters was studied [International Euroconference on Advanced Semiconductor Devices, pp. 391-394 (2000)]. The dual δ -doped and doped-channel InGaPInGaAs pHEMTs were also investigated and studied [IEEE Trans. Electron Devices, 54, 1617 (2007)]. However, the lower/upper δ -doped layer doping profile and surface phenomena of InGaPInGaAs pHEMTs are still ambiguous. In this work, the epitaxial concentration designs of lower and upper δ -doped layers were 1:3, 2:2, and 3:1 (unit: 1012 cm-2) for dual δ -doped InGaPInGaAs pHEMTs, respectively. The concentration profile of the lower and upper δ -doped layers can be adjusted to realize optimal InGaPInGaAs low noise and high linearity pHEMT.
AB - Dual δ -doped InGaPInGaAs pseudomorphic high electron mobility transistors (pHEMTs) with various doping profile designs were adopted to investigate the relationship between the doping profile of pHEMTs and the surface phenomena. Compared to a single δ -doped pHEMT, the dual δ -doped design provided a high current density, which was suitable for low noise and high power applications [IEEE Trans. Electron Devices, 35, 879 (1988); J. Appl. Phys., 81, 3576 (1997)]. The influence of the δ -doped layer in GaAs Schottky diode parameters was studied [International Euroconference on Advanced Semiconductor Devices, pp. 391-394 (2000)]. The dual δ -doped and doped-channel InGaPInGaAs pHEMTs were also investigated and studied [IEEE Trans. Electron Devices, 54, 1617 (2007)]. However, the lower/upper δ -doped layer doping profile and surface phenomena of InGaPInGaAs pHEMTs are still ambiguous. In this work, the epitaxial concentration designs of lower and upper δ -doped layers were 1:3, 2:2, and 3:1 (unit: 1012 cm-2) for dual δ -doped InGaPInGaAs pHEMTs, respectively. The concentration profile of the lower and upper δ -doped layers can be adjusted to realize optimal InGaPInGaAs low noise and high linearity pHEMT.
UR - http://www.scopus.com/inward/record.url?scp=65949105052&partnerID=8YFLogxK
U2 - 10.1149/1.3121731
DO - 10.1149/1.3121731
M3 - 文章
AN - SCOPUS:65949105052
SN - 0013-4651
VL - 156
SP - H512-H515
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 7
ER -