Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

Jer Chyi Wang; Chao Sung Lai; Yu Kai Chen; Chih Ting Lin; Chuan Pu Liu; Michael R.S. Huang; Yu Ching Fang

doi:10.1149/1.3109573

Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

Jer Chyi Wang^*, Chao Sung Lai, Yu Kai Chen, Chih Ting Lin, Chuan Pu Liu, Michael R.S. Huang, Yu Ching Fang

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

39 Scopus citations

Abstract

Gadolinium oxide nanocrystal (Gd₂ O₃-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd₂ O₃-NC dot surrounded by amorphous Gd₂ O₃ dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd₂ O₃-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 10¹¹ cm^-2. In addition, the formation of Gd₂ O₃ -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 10⁴ program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd₂ O₃ nanocrystal memory.

Original language	English
Pages (from-to)	H202-H204
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	6
DOIs	https://doi.org/10.1149/1.3109573
State	Published - 2009

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@article{f3d773dc80d1403baf940d636e50ee5b,

title = "Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing",

abstract = "Gadolinium oxide nanocrystal (Gd2 O3-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2 O3-NC dot surrounded by amorphous Gd2 O3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2 O3-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 1011 cm-2. In addition, the formation of Gd2 O3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd2 O3 nanocrystal memory.",

author = "Wang, {Jer Chyi} and Lai, {Chao Sung} and Chen, {Yu Kai} and Lin, {Chih Ting} and Liu, {Chuan Pu} and Huang, {Michael R.S.} and Fang, {Yu Ching}",

year = "2009",

doi = "10.1149/1.3109573",

language = "英语",

volume = "12",

pages = "H202--H204",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "6",

}

TY - JOUR

T1 - Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

AU - Wang, Jer Chyi

AU - Lai, Chao Sung

AU - Chen, Yu Kai

AU - Lin, Chih Ting

AU - Liu, Chuan Pu

AU - Huang, Michael R.S.

AU - Fang, Yu Ching

PY - 2009

Y1 - 2009

N2 - Gadolinium oxide nanocrystal (Gd2 O3-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2 O3-NC dot surrounded by amorphous Gd2 O3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2 O3-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 1011 cm-2. In addition, the formation of Gd2 O3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd2 O3 nanocrystal memory.

AB - Gadolinium oxide nanocrystal (Gd2 O3-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2 O3-NC dot surrounded by amorphous Gd2 O3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2 O3-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 1011 cm-2. In addition, the formation of Gd2 O3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd2 O3 nanocrystal memory.

UR - http://www.scopus.com/inward/record.url?scp=64549108544&partnerID=8YFLogxK

U2 - 10.1149/1.3109573

DO - 10.1149/1.3109573

M3 - 文章

AN - SCOPUS:64549108544

SN - 1099-0062

VL - 12

SP - H202-H204

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

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