Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

Jer Chyi Wang*, Chao Sung Lai, Yu Kai Chen, Chih Ting Lin, Chuan Pu Liu, Michael R.S. Huang, Yu Ching Fang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

39 Scopus citations


Gadolinium oxide nanocrystal (Gd2 O3-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2 O3-NC dot surrounded by amorphous Gd2 O3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2 O3-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 1011 cm-2. In addition, the formation of Gd2 O3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd2 O3 nanocrystal memory.

Original languageEnglish
Pages (from-to)H202-H204
JournalElectrochemical and Solid-State Letters
Issue number6
StatePublished - 2009


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