Characteristics of HfO2/Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO2 gate dielectric and O2 plasma surface treatment

Ming Wen Ma; Tsung Yu Chiang; Woei Cherng Wu; Tien Sheng Chao; Tan Fu Lei

doi:10.1109/TED.2008.2006543

Characteristics of HfO₂/Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO₂ gate dielectric and O₂ plasma surface treatment

Ming Wen Ma^*, Tsung Yu Chiang, Woei Cherng Wu, Tien Sheng Chao, Tan Fu Lei

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

18 Scopus citations

Abstract

In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO₂ gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO₂/poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO₂ LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO₂ gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.

Original language	English
Pages (from-to)	3489-3493
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	12
DOIs	https://doi.org/10.1109/TED.2008.2006543
State	Published - 2008
Externally published	Yes

Keywords

3-D integration
High-κ
Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs)
Oxygen plasma
System-on-panel (SOP)

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10.1109/TED.2008.2006543

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title = "Characteristics of HfO2/Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO2 gate dielectric and O2 plasma surface treatment",

abstract = "In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO2 gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO2/poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO2 LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO2 gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.",

keywords = "3-D integration, High-κ, Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs), Oxygen plasma, System-on-panel (SOP)",

author = "Ma, {Ming Wen} and Chiang, {Tsung Yu} and Wu, {Woei Cherng} and Chao, {Tien Sheng} and Lei, {Tan Fu}",

year = "2008",

doi = "10.1109/TED.2008.2006543",

language = "英语",

volume = "55",

pages = "3489--3493",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Characteristics of HfO2/Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO2 gate dielectric and O2 plasma surface treatment

AU - Ma, Ming Wen

AU - Chiang, Tsung Yu

AU - Wu, Woei Cherng

AU - Chao, Tien Sheng

AU - Lei, Tan Fu

PY - 2008

Y1 - 2008

N2 - In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO2 gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO2/poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO2 LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO2 gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.

AB - In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO2 gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO2/poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO2 LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO2 gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.

KW - 3-D integration

KW - High-κ

KW - Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs)

KW - Oxygen plasma

KW - System-on-panel (SOP)

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U2 - 10.1109/TED.2008.2006543

DO - 10.1109/TED.2008.2006543

M3 - 文章

AN - SCOPUS:57149138864

SN - 0018-9383

VL - 55

SP - 3489

EP - 3493

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Characteristics of HfO₂/Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO₂ gate dielectric and O₂ plasma surface treatment

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Keywords

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