Characteristics of In0.3Ga0.7As/in0.29Al0.71 As heterostructures grown on GaAs using inalas buffers

Jen Inn Chyi; Jia Lin Shieh; Chia Song Wu; Ray Ming Lin; Jen Wei Pan; Yi Jen Chan; Chun Hong Lin

doi:10.1143/JJAP.33.L1574

Characteristics of In_0.3Ga_0.7As/in_0.29Al_0.71 As heterostructures grown on GaAs using inalas buffers

Jen Inn Chyi
, Jia Lin Shieh
, Chia Song Wu
, Ray Ming Lin
, Jen Wei Pan
, Yi Jen Chan
, Chun Hong Lin

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

Device quality In_0.29Al_0.71 As and In_0.3Ga_0.7 As epilayers have been successfully grown on GaAs substrates using a carefully designed In_xAl_1–xAs multistage strain-relaxed buffer. Cross-sectional transmission electron microscopy has shown that the misfit dislocations are confined in the lower regions of the metamorphic buffer layer. The Hall electron mobility of the modulation doped structure grown on the InAlAs buffer was 6160 and 25379 cm²/V･s with sheet carrier densities of 1.9 × 10¹² and 1.8 × 10¹² cm–2 at 300 and 77 K, respectively. The excellent characteristics of the field-effect transistors fabricated on this structure have indicated its potential for practical applications.

Original language	English
Pages (from-to)	L1574-L1576
Journal	Japanese Journal of Applied Physics
Volume	33
Issue number	11B
DOIs	https://doi.org/10.1143/JJAP.33.L1574
State	Published - 11 1994
Externally published	Yes

Keywords

High electron mobility transistor
Lattice mismatch

Access to Document

10.1143/JJAP.33.L1574

Cite this

@article{7335654412c14ed694fe26d0ae515943,

title = "Characteristics of In0.3Ga0.7As/in0.29Al0.71 As heterostructures grown on GaAs using inalas buffers",

abstract = "Device quality In0.29Al0.71 As and In0.3Ga0.7 As epilayers have been successfully grown on GaAs substrates using a carefully designed InxAl1–xAs multistage strain-relaxed buffer. Cross-sectional transmission electron microscopy has shown that the misfit dislocations are confined in the lower regions of the metamorphic buffer layer. The Hall electron mobility of the modulation doped structure grown on the InAlAs buffer was 6160 and 25379 cm2/V･s with sheet carrier densities of 1.9 × 1012 and 1.8 × 1012 cm–2 at 300 and 77 K, respectively. The excellent characteristics of the field-effect transistors fabricated on this structure have indicated its potential for practical applications.",

keywords = "High electron mobility transistor, Lattice mismatch",

author = "Chyi, \{Jen Inn\} and Shieh, \{Jia Lin\} and Wu, \{Chia Song\} and Lin, \{Ray Ming\} and Pan, \{Jen Wei\} and Chan, \{Yi Jen\} and Lin, \{Chun Hong\}",

year = "1994",

month = nov,

doi = "10.1143/JJAP.33.L1574",

language = "英语",

volume = "33",

pages = "L1574--L1576",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "11B",

}

TY - JOUR

T1 - Characteristics of In0.3Ga0.7As/in0.29Al0.71 As heterostructures grown on GaAs using inalas buffers

AU - Chyi, Jen Inn

AU - Shieh, Jia Lin

AU - Wu, Chia Song

AU - Lin, Ray Ming

AU - Pan, Jen Wei

AU - Chan, Yi Jen

AU - Lin, Chun Hong

PY - 1994/11

Y1 - 1994/11

N2 - Device quality In0.29Al0.71 As and In0.3Ga0.7 As epilayers have been successfully grown on GaAs substrates using a carefully designed InxAl1–xAs multistage strain-relaxed buffer. Cross-sectional transmission electron microscopy has shown that the misfit dislocations are confined in the lower regions of the metamorphic buffer layer. The Hall electron mobility of the modulation doped structure grown on the InAlAs buffer was 6160 and 25379 cm2/V･s with sheet carrier densities of 1.9 × 1012 and 1.8 × 1012 cm–2 at 300 and 77 K, respectively. The excellent characteristics of the field-effect transistors fabricated on this structure have indicated its potential for practical applications.

AB - Device quality In0.29Al0.71 As and In0.3Ga0.7 As epilayers have been successfully grown on GaAs substrates using a carefully designed InxAl1–xAs multistage strain-relaxed buffer. Cross-sectional transmission electron microscopy has shown that the misfit dislocations are confined in the lower regions of the metamorphic buffer layer. The Hall electron mobility of the modulation doped structure grown on the InAlAs buffer was 6160 and 25379 cm2/V･s with sheet carrier densities of 1.9 × 1012 and 1.8 × 1012 cm–2 at 300 and 77 K, respectively. The excellent characteristics of the field-effect transistors fabricated on this structure have indicated its potential for practical applications.

KW - High electron mobility transistor

KW - Lattice mismatch

UR - https://www.scopus.com/pages/publications/0028544732

U2 - 10.1143/JJAP.33.L1574

DO - 10.1143/JJAP.33.L1574

M3 - 文章

AN - SCOPUS:0028544732

SN - 0021-4922

VL - 33

SP - L1574-L1576

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11B

ER -

Characteristics of In_0.3Ga_0.7As/in_0.29Al_0.71 As heterostructures grown on GaAs using inalas buffers

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this