Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory

Chao Sung Lai; Jer Chyi Wang; Li Chun Chang; Yi Kai Liao; Pai Chi Chou; Wei Cheng Chang; Chi Fong Ai; Wen Fa Tsai

doi:10.1016/j.sse.2012.05.019

Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory

Chao Sung Lai, Jer Chyi Wang^*, Li Chun Chang, Yi Kai Liao, Pai Chi Chou, Wei Cheng Chang, Chi Fong Ai, Wen Fa Tsai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

In this study, we investigate the oxygen plasma-immersion-ion-implantation (PIII) treatment on the characteristics of tungsten nanocrystal (W-NC) nonvolatile memories. The oxygen PIII has multi-species plasma of O⁺, O⁺⁺ and O2+, and the simulation can successfully fit the oxygen secondary ion mass spectrometry (SIMS) profile. It is observed that the oxygen PIII treatment can effectively improve the disturbance effect and endurance characteristics for over 1.5 V memory window under 10⁴ program/erase cycling. The discrete W-NCs are clearly observed from the high-resolution transmission electron microscopy (HRTEM) image and confirmed by the energy-dispersive X-ray (EDX) analysis. Nevertheless, some damage of O ₂ PIII on tunneling oxide and silicon surface may lead to the inadequate retention characteristics. By fine-tuning the plasma ions, the PIII technique can be applied into future nonvolatile memory manufacturing.

Original language	English
Pages (from-to)	31-34
Number of pages	4
Journal	Solid-State Electronics
Volume	77
DOIs	https://doi.org/10.1016/j.sse.2012.05.019
State	Published - 11 2012

Keywords

Nonvolatile memory (NVM)
Plasma-immersion-ion-implantation (PIII)
Read disturbance
Tungsten nanocrystal (W-NC)

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10.1016/j.sse.2012.05.019

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@article{bcead2cc6e0a40cba04aa0383e87f32f,

title = "Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory",

abstract = "In this study, we investigate the oxygen plasma-immersion-ion-implantation (PIII) treatment on the characteristics of tungsten nanocrystal (W-NC) nonvolatile memories. The oxygen PIII has multi-species plasma of O+, O++ and O2+, and the simulation can successfully fit the oxygen secondary ion mass spectrometry (SIMS) profile. It is observed that the oxygen PIII treatment can effectively improve the disturbance effect and endurance characteristics for over 1.5 V memory window under 104 program/erase cycling. The discrete W-NCs are clearly observed from the high-resolution transmission electron microscopy (HRTEM) image and confirmed by the energy-dispersive X-ray (EDX) analysis. Nevertheless, some damage of O 2 PIII on tunneling oxide and silicon surface may lead to the inadequate retention characteristics. By fine-tuning the plasma ions, the PIII technique can be applied into future nonvolatile memory manufacturing.",

keywords = "Nonvolatile memory (NVM), Plasma-immersion-ion-implantation (PIII), Read disturbance, Tungsten nanocrystal (W-NC)",

author = "Lai, {Chao Sung} and Wang, {Jer Chyi} and Chang, {Li Chun} and Liao, {Yi Kai} and Chou, {Pai Chi} and Chang, {Wei Cheng} and Ai, {Chi Fong} and Tsai, {Wen Fa}",

year = "2012",

month = nov,

doi = "10.1016/j.sse.2012.05.019",

language = "英语",

volume = "77",

pages = "31--34",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory

AU - Lai, Chao Sung

AU - Wang, Jer Chyi

AU - Chang, Li Chun

AU - Liao, Yi Kai

AU - Chou, Pai Chi

AU - Chang, Wei Cheng

AU - Ai, Chi Fong

AU - Tsai, Wen Fa

PY - 2012/11

Y1 - 2012/11

N2 - In this study, we investigate the oxygen plasma-immersion-ion-implantation (PIII) treatment on the characteristics of tungsten nanocrystal (W-NC) nonvolatile memories. The oxygen PIII has multi-species plasma of O+, O++ and O2+, and the simulation can successfully fit the oxygen secondary ion mass spectrometry (SIMS) profile. It is observed that the oxygen PIII treatment can effectively improve the disturbance effect and endurance characteristics for over 1.5 V memory window under 104 program/erase cycling. The discrete W-NCs are clearly observed from the high-resolution transmission electron microscopy (HRTEM) image and confirmed by the energy-dispersive X-ray (EDX) analysis. Nevertheless, some damage of O 2 PIII on tunneling oxide and silicon surface may lead to the inadequate retention characteristics. By fine-tuning the plasma ions, the PIII technique can be applied into future nonvolatile memory manufacturing.

AB - In this study, we investigate the oxygen plasma-immersion-ion-implantation (PIII) treatment on the characteristics of tungsten nanocrystal (W-NC) nonvolatile memories. The oxygen PIII has multi-species plasma of O+, O++ and O2+, and the simulation can successfully fit the oxygen secondary ion mass spectrometry (SIMS) profile. It is observed that the oxygen PIII treatment can effectively improve the disturbance effect and endurance characteristics for over 1.5 V memory window under 104 program/erase cycling. The discrete W-NCs are clearly observed from the high-resolution transmission electron microscopy (HRTEM) image and confirmed by the energy-dispersive X-ray (EDX) analysis. Nevertheless, some damage of O 2 PIII on tunneling oxide and silicon surface may lead to the inadequate retention characteristics. By fine-tuning the plasma ions, the PIII technique can be applied into future nonvolatile memory manufacturing.

KW - Nonvolatile memory (NVM)

KW - Plasma-immersion-ion-implantation (PIII)

KW - Read disturbance

KW - Tungsten nanocrystal (W-NC)

UR - http://www.scopus.com/inward/record.url?scp=84866045877&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2012.05.019

DO - 10.1016/j.sse.2012.05.019

M3 - 文章

AN - SCOPUS:84866045877

SN - 0038-1101

VL - 77

SP - 31

EP - 34

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory

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Keywords

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