Characteristics of pseudomorphic AlGaAs/InxGa1-xAs (0≤x≤0.25) doped-channel field-effect transistors

Ming Ta Yang; Yi Jen Chan; Chun Hung Chen; Jen Inn Chyi; Ray Ming Lin; Jia Lin Shieh

doi:10.1063/1.357608

Characteristics of pseudomorphic AlGaAs/In_xGa_1-xAs (0≤x≤0.25) doped-channel field-effect transistors

Ming Ta Yang^*
, Yi Jen Chan
, Chun Hung Chen
, Jen Inn Chyi
, Ray Ming Lin
, Jia Lin Shieh

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

The pseudomorphic properties of doped-channel field-effect transistors have been thoroughly investigated based on AlGaAs/In_xGa_1-xAs (0≤x≤0.25) heterostructures with different In contents. Through various analytical schemes and device characterization, we observed that by introducing a 150 Å strained In_0.15Ga_0.85As channel we can enhance device performance; however, this strained channel is not stable after high-temperature heat treatment. By further increasing the In content up to x=0.25, the device performance started to degrade, which is associated with strain relaxation in this highly strained channel.

Original language	English
Pages (from-to)	2494-2498
Number of pages	5
Journal	Journal of Applied Physics
Volume	76
Issue number	4
DOIs	https://doi.org/10.1063/1.357608
State	Published - 1994
Externally published	Yes

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@article{f39ddc9f5e224bd4b563b57d8bd5723d,

title = "Characteristics of pseudomorphic AlGaAs/InxGa1-xAs (0≤x≤0.25) doped-channel field-effect transistors",

abstract = "The pseudomorphic properties of doped-channel field-effect transistors have been thoroughly investigated based on AlGaAs/InxGa1-xAs (0≤x≤0.25) heterostructures with different In contents. Through various analytical schemes and device characterization, we observed that by introducing a 150 {\AA} strained In0.15Ga0.85As channel we can enhance device performance; however, this strained channel is not stable after high-temperature heat treatment. By further increasing the In content up to x=0.25, the device performance started to degrade, which is associated with strain relaxation in this highly strained channel.",

author = "Yang, \{Ming Ta\} and Chan, \{Yi Jen\} and Chen, \{Chun Hung\} and Chyi, \{Jen Inn\} and Lin, \{Ray Ming\} and Shieh, \{Jia Lin\}",

year = "1994",

doi = "10.1063/1.357608",

language = "英语",

volume = "76",

pages = "2494--2498",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Characteristics of pseudomorphic AlGaAs/InxGa1-xAs (0≤x≤0.25) doped-channel field-effect transistors

AU - Yang, Ming Ta

AU - Chan, Yi Jen

AU - Chen, Chun Hung

AU - Chyi, Jen Inn

AU - Lin, Ray Ming

AU - Shieh, Jia Lin

PY - 1994

Y1 - 1994

N2 - The pseudomorphic properties of doped-channel field-effect transistors have been thoroughly investigated based on AlGaAs/InxGa1-xAs (0≤x≤0.25) heterostructures with different In contents. Through various analytical schemes and device characterization, we observed that by introducing a 150 Å strained In0.15Ga0.85As channel we can enhance device performance; however, this strained channel is not stable after high-temperature heat treatment. By further increasing the In content up to x=0.25, the device performance started to degrade, which is associated with strain relaxation in this highly strained channel.

AB - The pseudomorphic properties of doped-channel field-effect transistors have been thoroughly investigated based on AlGaAs/InxGa1-xAs (0≤x≤0.25) heterostructures with different In contents. Through various analytical schemes and device characterization, we observed that by introducing a 150 Å strained In0.15Ga0.85As channel we can enhance device performance; however, this strained channel is not stable after high-temperature heat treatment. By further increasing the In content up to x=0.25, the device performance started to degrade, which is associated with strain relaxation in this highly strained channel.

UR - https://www.scopus.com/pages/publications/0343541143

U2 - 10.1063/1.357608

DO - 10.1063/1.357608

M3 - 文章

AN - SCOPUS:0343541143

SN - 0021-8979

VL - 76

SP - 2494

EP - 2498

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Characteristics of pseudomorphic AlGaAs/In_xGa_1-xAs (0≤x≤0.25) doped-channel field-effect transistors

Abstract

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