Characteristics of SONOS-Ttpe flash memory with in situ embedded silicon nanocrystals

Tsung Yu Chiang; Yi Hong Wu; William Cheng Yu Ma; Po Yi Kuo; Kuan Ti Wang; Chia Chun Liao; Chi Ruei Yeh; Wen Luh Yang; Tien Sheng Chao

doi:10.1109/TED.2010.2051489

Characteristics of SONOS-Ttpe flash memory with in situ embedded silicon nanocrystals

Tsung Yu Chiang^*, Yi Hong Wu, William Cheng Yu Ma, Po Yi Kuo, Kuan Ti Wang, Chia Chun Liao, Chi Ruei Yeh, Wen Luh Yang, Tien Sheng Chao

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

In this paper, siliconoxidenitrideoxidesemiconductor (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method with multilevel and 2-b/cell operation have been successfully demonstrated. The proposed in situ Si-NC deposition method exhibits the advantages of low cost, simplicity, and compatibility with modern IC processes. SONOS memories with embedded Si-NCs exhibit a significantly improved performance with a large memory window (> 5.5 V), low operating voltage (P/E voltage: V_g = 6 V, V_d = 7 V and V_g = -7 V, V_d = 10 V,respectively), greater tolerable gate and drain disturbance ( V_t shift 0.2 V), negligible second-bit effect, high P/E speed (after programming time = 10μs with a 2-V shift of V_t under V_g = V _d = 6 V operation), good retention time (> 10⁸ s for 13% charge loss), and excellent endurance performance (after 10⁴ P/E cycles with a memory window of 3 V).

Original language	English
Article number	5497125
Pages (from-to)	1895-1902
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	8
DOIs	https://doi.org/10.1109/TED.2010.2051489
State	Published - 08 2010
Externally published	Yes

Keywords

In situ
memory window
nonvolatile memory
retention time
silicon nanocrystal (Si-NC)

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10.1109/TED.2010.2051489

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@article{a24833c9a9fd46768e58d18a6cc685d4,

title = "Characteristics of SONOS-Ttpe flash memory with in situ embedded silicon nanocrystals",

abstract = "In this paper, siliconoxidenitrideoxidesemiconductor (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method with multilevel and 2-b/cell operation have been successfully demonstrated. The proposed in situ Si-NC deposition method exhibits the advantages of low cost, simplicity, and compatibility with modern IC processes. SONOS memories with embedded Si-NCs exhibit a significantly improved performance with a large memory window (> 5.5 V), low operating voltage (P/E voltage: Vg = 6 V, Vd = 7 V and Vg = -7 V, Vd = 10 V,respectively), greater tolerable gate and drain disturbance ( Vt shift 0.2 V), negligible second-bit effect, high P/E speed (after programming time = 10μs with a 2-V shift of Vt under Vg = V d = 6 V operation), good retention time (> 108 s for 13% charge loss), and excellent endurance performance (after 104 P/E cycles with a memory window of 3 V).",

keywords = "In situ, memory window, nonvolatile memory, retention time, silicon nanocrystal (Si-NC)",

author = "Chiang, {Tsung Yu} and Wu, {Yi Hong} and Ma, {William Cheng Yu} and Kuo, {Po Yi} and Wang, {Kuan Ti} and Liao, {Chia Chun} and Yeh, {Chi Ruei} and Yang, {Wen Luh} and Chao, {Tien Sheng}",

year = "2010",

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doi = "10.1109/TED.2010.2051489",

language = "英语",

volume = "57",

pages = "1895--1902",

journal = "IEEE Transactions on Electron Devices",

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AU - Chiang, Tsung Yu

AU - Wu, Yi Hong

AU - Ma, William Cheng Yu

AU - Kuo, Po Yi

AU - Wang, Kuan Ti

AU - Liao, Chia Chun

AU - Yeh, Chi Ruei

AU - Yang, Wen Luh

AU - Chao, Tien Sheng

PY - 2010/8

Y1 - 2010/8

N2 - In this paper, siliconoxidenitrideoxidesemiconductor (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method with multilevel and 2-b/cell operation have been successfully demonstrated. The proposed in situ Si-NC deposition method exhibits the advantages of low cost, simplicity, and compatibility with modern IC processes. SONOS memories with embedded Si-NCs exhibit a significantly improved performance with a large memory window (> 5.5 V), low operating voltage (P/E voltage: Vg = 6 V, Vd = 7 V and Vg = -7 V, Vd = 10 V,respectively), greater tolerable gate and drain disturbance ( Vt shift 0.2 V), negligible second-bit effect, high P/E speed (after programming time = 10μs with a 2-V shift of Vt under Vg = V d = 6 V operation), good retention time (> 108 s for 13% charge loss), and excellent endurance performance (after 104 P/E cycles with a memory window of 3 V).

AB - In this paper, siliconoxidenitrideoxidesemiconductor (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method with multilevel and 2-b/cell operation have been successfully demonstrated. The proposed in situ Si-NC deposition method exhibits the advantages of low cost, simplicity, and compatibility with modern IC processes. SONOS memories with embedded Si-NCs exhibit a significantly improved performance with a large memory window (> 5.5 V), low operating voltage (P/E voltage: Vg = 6 V, Vd = 7 V and Vg = -7 V, Vd = 10 V,respectively), greater tolerable gate and drain disturbance ( Vt shift 0.2 V), negligible second-bit effect, high P/E speed (after programming time = 10μs with a 2-V shift of Vt under Vg = V d = 6 V operation), good retention time (> 108 s for 13% charge loss), and excellent endurance performance (after 104 P/E cycles with a memory window of 3 V).

KW - In situ

KW - memory window

KW - nonvolatile memory

KW - retention time

KW - silicon nanocrystal (Si-NC)

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U2 - 10.1109/TED.2010.2051489

DO - 10.1109/TED.2010.2051489

M3 - 文章

AN - SCOPUS:77955146183

SN - 0018-9383

VL - 57

SP - 1895

EP - 1902

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

M1 - 5497125

ER -

Characteristics of SONOS-Ttpe flash memory with in situ embedded silicon nanocrystals

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Keywords

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