Characteristics of transparent ZnO-based thin-film transistors with high-k dielectric Gd2O3 gate insulators fabricated at room temperature

Kou Chen Liu; Jung Ruey Tsai; Chi Shiau Li; Po Hsiu Chien; Jyun Ning Chen; Wen Sheng Feng

doi:10.1143/JJAP.49.04DF21

Characteristics of transparent ZnO-based thin-film transistors with high-k dielectric Gd₂O₃ gate insulators fabricated at room temperature

Kou Chen Liu^*, Jung Ruey Tsai, Chi Shiau Li, Po Hsiu Chien, Jyun Ning Chen, Wen Sheng Feng

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

14 Scopus citations

Abstract

A full room-temperature-fabricated ZnO-based thin-film transistor (TFT) has been demonstrated in this study using a gate dielectric of gadolinium oxide (Gd₂O₃) thin films. This is the first report on the use of Gd₂O₃ films as the gate insulator for a metal-oxide-based TFT. The properties of ZnO and Gd₂O₃ films deposited by pulsed laser deposition (PLD) at room temperature have also been studied under different oxygen pressures. In the high-oxygen-pressure region, the resistivity of the ZnO films was predominated by carrier concentration, while it is controlled by carrier mobility in the low-oxygen-pressure region. The on/off current ratio, field-effect mobility, and subthreshold swing of gate voltage obtained were approximately 10⁵, 1.12 cm² V^-1 s^-1, and 0.4 V/decade, respectively.

Original language	English
Article number	04DF21
Journal	Japanese Journal of Applied Physics
Volume	49
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.04DF21
State	Published - 04 2010

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title = "Characteristics of transparent ZnO-based thin-film transistors with high-k dielectric Gd2O3 gate insulators fabricated at room temperature",

abstract = "A full room-temperature-fabricated ZnO-based thin-film transistor (TFT) has been demonstrated in this study using a gate dielectric of gadolinium oxide (Gd2O3) thin films. This is the first report on the use of Gd2O3 films as the gate insulator for a metal-oxide-based TFT. The properties of ZnO and Gd2O3 films deposited by pulsed laser deposition (PLD) at room temperature have also been studied under different oxygen pressures. In the high-oxygen-pressure region, the resistivity of the ZnO films was predominated by carrier concentration, while it is controlled by carrier mobility in the low-oxygen-pressure region. The on/off current ratio, field-effect mobility, and subthreshold swing of gate voltage obtained were approximately 105, 1.12 cm2 V-1 s-1, and 0.4 V/decade, respectively.",

author = "Liu, \{Kou Chen\} and Tsai, \{Jung Ruey\} and Li, \{Chi Shiau\} and Chien, \{Po Hsiu\} and Chen, \{Jyun Ning\} and Feng, \{Wen Sheng\}",

year = "2010",

month = apr,

doi = "10.1143/JJAP.49.04DF21",

language = "英语",

volume = "49",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

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T1 - Characteristics of transparent ZnO-based thin-film transistors with high-k dielectric Gd2O3 gate insulators fabricated at room temperature

AU - Liu, Kou Chen

AU - Tsai, Jung Ruey

AU - Li, Chi Shiau

AU - Chien, Po Hsiu

AU - Chen, Jyun Ning

AU - Feng, Wen Sheng

PY - 2010/4

Y1 - 2010/4

N2 - A full room-temperature-fabricated ZnO-based thin-film transistor (TFT) has been demonstrated in this study using a gate dielectric of gadolinium oxide (Gd2O3) thin films. This is the first report on the use of Gd2O3 films as the gate insulator for a metal-oxide-based TFT. The properties of ZnO and Gd2O3 films deposited by pulsed laser deposition (PLD) at room temperature have also been studied under different oxygen pressures. In the high-oxygen-pressure region, the resistivity of the ZnO films was predominated by carrier concentration, while it is controlled by carrier mobility in the low-oxygen-pressure region. The on/off current ratio, field-effect mobility, and subthreshold swing of gate voltage obtained were approximately 105, 1.12 cm2 V-1 s-1, and 0.4 V/decade, respectively.

AB - A full room-temperature-fabricated ZnO-based thin-film transistor (TFT) has been demonstrated in this study using a gate dielectric of gadolinium oxide (Gd2O3) thin films. This is the first report on the use of Gd2O3 films as the gate insulator for a metal-oxide-based TFT. The properties of ZnO and Gd2O3 films deposited by pulsed laser deposition (PLD) at room temperature have also been studied under different oxygen pressures. In the high-oxygen-pressure region, the resistivity of the ZnO films was predominated by carrier concentration, while it is controlled by carrier mobility in the low-oxygen-pressure region. The on/off current ratio, field-effect mobility, and subthreshold swing of gate voltage obtained were approximately 105, 1.12 cm2 V-1 s-1, and 0.4 V/decade, respectively.

UR - https://www.scopus.com/pages/publications/77952738157

U2 - 10.1143/JJAP.49.04DF21

DO - 10.1143/JJAP.49.04DF21

M3 - 文章

AN - SCOPUS:77952738157

SN - 0021-4922

VL - 49

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 PART 2

M1 - 04DF21

ER -

Characteristics of transparent ZnO-based thin-film transistors with high-k dielectric Gd₂O₃ gate insulators fabricated at room temperature

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