Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers

Je Hun Lee; S. Maikap; Doh Y. Kim; R. Mahapatra; S. K. Ray; Y. S. No; Won Kook Choi

doi:10.1063/1.1589165

Characteristics of ultrathin HfO₂ gate dielectrics on strained-Si_0.74Ge_0.26 layers

Je Hun Lee
, S. Maikap^*
, Doh Y. Kim
, R. Mahapatra
, S. K. Ray
, Y. S. No
, Won Kook Choi

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

33 Scopus citations

Abstract

The structural and electrical characteristics of HfO₂ gate dielectrics on strained-Si_0.74Ge_0.26 layers were investigated. The electrical properties were studied using metal-oxide-semiconductor (MOS) structures. The results indicate that these dielectrics show an equivalent oxide thickness as low as 0.6 nm for HfO ₂ and 2.2 nm for the Hf-silicate layers.

Original language	English
Pages (from-to)	779-781
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	4
DOIs	https://doi.org/10.1063/1.1589165
State	Published - 28 07 2003
Externally published	Yes

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title = "Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers",

abstract = "The structural and electrical characteristics of HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers were investigated. The electrical properties were studied using metal-oxide-semiconductor (MOS) structures. The results indicate that these dielectrics show an equivalent oxide thickness as low as 0.6 nm for HfO 2 and 2.2 nm for the Hf-silicate layers.",

author = "Lee, \{Je Hun\} and S. Maikap and Kim, \{Doh Y.\} and R. Mahapatra and Ray, \{S. K.\} and No, \{Y. S.\} and Choi, \{Won Kook\}",

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T1 - Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers

AU - Lee, Je Hun

AU - Maikap, S.

AU - Kim, Doh Y.

AU - Mahapatra, R.

AU - Ray, S. K.

AU - No, Y. S.

AU - Choi, Won Kook

PY - 2003/7/28

Y1 - 2003/7/28

N2 - The structural and electrical characteristics of HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers were investigated. The electrical properties were studied using metal-oxide-semiconductor (MOS) structures. The results indicate that these dielectrics show an equivalent oxide thickness as low as 0.6 nm for HfO 2 and 2.2 nm for the Hf-silicate layers.

AB - The structural and electrical characteristics of HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers were investigated. The electrical properties were studied using metal-oxide-semiconductor (MOS) structures. The results indicate that these dielectrics show an equivalent oxide thickness as low as 0.6 nm for HfO 2 and 2.2 nm for the Hf-silicate layers.

UR - https://www.scopus.com/pages/publications/0041511863

U2 - 10.1063/1.1589165

DO - 10.1063/1.1589165

M3 - 文章

AN - SCOPUS:0041511863

SN - 0003-6951

VL - 83

SP - 779

EP - 781

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Characteristics of ultrathin HfO₂ gate dielectrics on strained-Si_0.74Ge_0.26 layers

Abstract

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