Characterization and modeling of balun on silicon substrate

Yong Zhong Xiong*, T. Hui Teo, J. S. Fu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A direct extraction method of equivalent circuit parameters for balun on silicon substrate is developed. Three ports balun is the targeted device for this extraction method. The extraction is based on two-port measurement instead of three-port by grounding the third port. The use of on-chip 50Ω load is also avoided. Hence, this method greatly simplified the measurement and extraction process. One set of balun fabricated on 0.18μm standard CMOS process with single-poly-6-metal is used as the test vehicle. The extraction results are in excellent agreement with the measured results up to 10GHz.

Original languageEnglish
Title of host publication10th International Symposium on Integrated Circuits, Devices and Systems, ISIC-2004
Subtitle of host publicationIntegrated Systems on Silicon - Proceedings
Pages251-254
Number of pages4
StatePublished - 2004
Externally publishedYes
Event10th International Symposium on Integrated Circuits, Devices and Systems, ISIC-2004: Integrated Systems on Silicon - Proceedings - Suntec, Singapore
Duration: 08 09 200410 09 2004

Publication series

Name10th International Symposium on Integrated Circuits, Devices and Systems, ISIC-2004: Integrated Systems on Silicon - Proceedings

Conference

Conference10th International Symposium on Integrated Circuits, Devices and Systems, ISIC-2004: Integrated Systems on Silicon - Proceedings
Country/TerritorySingapore
CitySuntec
Period08/09/0410/09/04

Keywords

  • Balun
  • CMOS
  • Direct extraction
  • Equivalent circuit

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