Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems

Tzer En Nee; Hui Tang Shen; Jen Cheng Wang; Ray Ming Lin

doi:10.1016/j.jcrysgro.2005.11.068

Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems

Tzer En Nee, Hui Tang Shen, Jen Cheng Wang, Ray Ming Lin^*

^*Corresponding author for this work

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

14 Scopus citations

Abstract

Berthelot-type optical and electrical properties of InGaN/GaN multiple quantum well p-i-n heterostructures composed of InGaN/GaN multiple quantum barriers with different InN molar fraction have been systematically investigated. Indium incorporation in the nanostructures augmented the increase in crystalline randomization. The so-called Berthelot behavior was observed, that is, the EL peak energy of the blue emission increased with temperature and then decreased monotonically. The electrical conductances of these samples were also contingent on the Berthelot temperatures. The thermal-related characterization for the spectral and transport measurement both corroborated that the Berthelot-type response was attributed to the microstructure disordering arising from the In nonstoichiometry.

Original language	English
Pages (from-to)	468-471
Number of pages	4
Journal	Journal of Crystal Growth
Volume	287
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.11.068
State	Published - 25 01 2006

Keywords

A3. Multiple quantum barrier
A3. Multiple quantum well
B2. Semiconductor ternary compound
B3. Light-emitting diodes

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10.1016/j.jcrysgro.2005.11.068

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title = "Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems",

abstract = "Berthelot-type optical and electrical properties of InGaN/GaN multiple quantum well p-i-n heterostructures composed of InGaN/GaN multiple quantum barriers with different InN molar fraction have been systematically investigated. Indium incorporation in the nanostructures augmented the increase in crystalline randomization. The so-called Berthelot behavior was observed, that is, the EL peak energy of the blue emission increased with temperature and then decreased monotonically. The electrical conductances of these samples were also contingent on the Berthelot temperatures. The thermal-related characterization for the spectral and transport measurement both corroborated that the Berthelot-type response was attributed to the microstructure disordering arising from the In nonstoichiometry.",

keywords = "A3. Multiple quantum barrier, A3. Multiple quantum well, B2. Semiconductor ternary compound, B3. Light-emitting diodes",

author = "Nee, {Tzer En} and Shen, {Hui Tang} and Wang, {Jen Cheng} and Lin, {Ray Ming}",

year = "2006",

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T1 - Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems

AU - Nee, Tzer En

AU - Shen, Hui Tang

AU - Wang, Jen Cheng

AU - Lin, Ray Ming

PY - 2006/1/25

Y1 - 2006/1/25

N2 - Berthelot-type optical and electrical properties of InGaN/GaN multiple quantum well p-i-n heterostructures composed of InGaN/GaN multiple quantum barriers with different InN molar fraction have been systematically investigated. Indium incorporation in the nanostructures augmented the increase in crystalline randomization. The so-called Berthelot behavior was observed, that is, the EL peak energy of the blue emission increased with temperature and then decreased monotonically. The electrical conductances of these samples were also contingent on the Berthelot temperatures. The thermal-related characterization for the spectral and transport measurement both corroborated that the Berthelot-type response was attributed to the microstructure disordering arising from the In nonstoichiometry.

AB - Berthelot-type optical and electrical properties of InGaN/GaN multiple quantum well p-i-n heterostructures composed of InGaN/GaN multiple quantum barriers with different InN molar fraction have been systematically investigated. Indium incorporation in the nanostructures augmented the increase in crystalline randomization. The so-called Berthelot behavior was observed, that is, the EL peak energy of the blue emission increased with temperature and then decreased monotonically. The electrical conductances of these samples were also contingent on the Berthelot temperatures. The thermal-related characterization for the spectral and transport measurement both corroborated that the Berthelot-type response was attributed to the microstructure disordering arising from the In nonstoichiometry.

KW - A3. Multiple quantum barrier

KW - A3. Multiple quantum well

KW - B2. Semiconductor ternary compound

KW - B3. Light-emitting diodes

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M3 - 文章

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SN - 0022-0248

VL - 287

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EP - 471

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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ER -

Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems

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Keywords

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