Characterization of body effect of Au-EGFET for KRAS gene detection

Hui Hsin Chang; Yi Ting Lin; Chai Ming Yang; Ji Dung Luo; Chiuan Chian Chiou; Chao Sung Lai

doi:10.1109/INEC.2014.7460457

Characterization of body effect of Au-EGFET for KRAS gene detection

Hui Hsin Chang, Yi Ting Lin, Chai Ming Yang, Ji Dung Luo, Chiuan Chian Chiou, Chao Sung Lai

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The sensing properties of Au-EGFET with body effect for DNA detection were first investigated in this study. The body effect means different substrate bias in CMOS circuit operation without common ground. With positive VBS of 1V, more shift of ID-VG curve could be a good index of DNA hybridization and concentration. It could be explained be the electric field induced counter ion effect. This measured technique can be used to enhance the sensing signal and improve the limit of detection (LOD).

Original language	English
Title of host publication	2014 IEEE International Nanoelectronics Conference, INEC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479950379
DOIs	https://doi.org/10.1109/INEC.2014.7460457
State	Published - 26 04 2016
Event	IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan Duration: 28 07 2014 → 31 07 2014

Publication series

Name	2014 IEEE International Nanoelectronics Conference, INEC 2014

Conference

Conference	IEEE International Nanoelectronics Conference, INEC 2014
Country/Territory	Japan
City	Sapporo
Period	28/07/14 → 31/07/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

Au
DNA
EGFET
body effect

Access to Document

10.1109/INEC.2014.7460457

Cite this

Chang, H. H., Lin, Y. T., Yang, C. M., Luo, J. D., Chiou, C. C., & Lai, C. S. (2016). Characterization of body effect of Au-EGFET for KRAS gene detection. In 2014 IEEE International Nanoelectronics Conference, INEC 2014 Article 7460457 (2014 IEEE International Nanoelectronics Conference, INEC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460457

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title = "Characterization of body effect of Au-EGFET for KRAS gene detection",

abstract = "The sensing properties of Au-EGFET with body effect for DNA detection were first investigated in this study. The body effect means different substrate bias in CMOS circuit operation without common ground. With positive VBS of 1V, more shift of ID-VG curve could be a good index of DNA hybridization and concentration. It could be explained be the electric field induced counter ion effect. This measured technique can be used to enhance the sensing signal and improve the limit of detection (LOD).",

keywords = "Au, DNA, EGFET, body effect",

author = "Chang, \{Hui Hsin\} and Lin, \{Yi Ting\} and Yang, \{Chai Ming\} and Luo, \{Ji Dung\} and Chiou, \{Chiuan Chian\} and Lai, \{Chao Sung\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; IEEE International Nanoelectronics Conference, INEC 2014 ; Conference date: 28-07-2014 Through 31-07-2014",

year = "2016",

month = apr,

day = "26",

doi = "10.1109/INEC.2014.7460457",

language = "英语",

series = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

address = "美国",

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Chang, HH, Lin, YT, Yang, CM, Luo, JD, Chiou, CC & Lai, CS 2016, Characterization of body effect of Au-EGFET for KRAS gene detection. in 2014 IEEE International Nanoelectronics Conference, INEC 2014., 7460457, 2014 IEEE International Nanoelectronics Conference, INEC 2014, Institute of Electrical and Electronics Engineers Inc., IEEE International Nanoelectronics Conference, INEC 2014, Sapporo, Japan, 28/07/14. https://doi.org/10.1109/INEC.2014.7460457

Characterization of body effect of Au-EGFET for KRAS gene detection. / Chang, Hui Hsin; Lin, Yi Ting; Yang, Chai Ming et al.
2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. 7460457 (2014 IEEE International Nanoelectronics Conference, INEC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization of body effect of Au-EGFET for KRAS gene detection

AU - Chang, Hui Hsin

AU - Lin, Yi Ting

AU - Yang, Chai Ming

AU - Luo, Ji Dung

AU - Chiou, Chiuan Chian

AU - Lai, Chao Sung

PY - 2016/4/26

Y1 - 2016/4/26

N2 - The sensing properties of Au-EGFET with body effect for DNA detection were first investigated in this study. The body effect means different substrate bias in CMOS circuit operation without common ground. With positive VBS of 1V, more shift of ID-VG curve could be a good index of DNA hybridization and concentration. It could be explained be the electric field induced counter ion effect. This measured technique can be used to enhance the sensing signal and improve the limit of detection (LOD).

AB - The sensing properties of Au-EGFET with body effect for DNA detection were first investigated in this study. The body effect means different substrate bias in CMOS circuit operation without common ground. With positive VBS of 1V, more shift of ID-VG curve could be a good index of DNA hybridization and concentration. It could be explained be the electric field induced counter ion effect. This measured technique can be used to enhance the sensing signal and improve the limit of detection (LOD).

KW - Au

KW - DNA

KW - EGFET

KW - body effect

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DO - 10.1109/INEC.2014.7460457

M3 - 会议稿件

AN - SCOPUS:84971265303

T3 - 2014 IEEE International Nanoelectronics Conference, INEC 2014

BT - 2014 IEEE International Nanoelectronics Conference, INEC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Nanoelectronics Conference, INEC 2014

Y2 - 28 July 2014 through 31 July 2014

ER -

Characterization of body effect of Au-EGFET for KRAS gene detection

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Keywords

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