Characterization of enhancement-mode AlGaN/GaN high electron mobility transistor using N2O plasma oxidation technology

Hsien Chin Chiu*, Chih Wei Yang, Chao Hung Chen, Jeffrey S. Fu, Feng Tso Chien

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

24 Scopus citations

Abstract

In this study, an enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) using N2O plasma oxidation process has been performed. Before the gate metal deposition, the AlGaN barrier layer was treated by 135 W N2O plasma for 240 s. The surface native oxide of AlGaN was removed and a 4 nm high quality Ga2O3/Al 2O3 compound insulator was simultaneously formed. The threshold voltage of conventional depletion-mode (D-mode) GaN HEMT was -3.6 V and this value can be shifted to 0.17 after N2O plasma oxidation treatment beneath the gate metal. This 4 nm Ga2O3/Al 2O3 compound insulator oxidized by N2O can suppress the polarization charge density for E-mode operation of gate terminal and the gate leakage was also reduced simultaneously.

Original languageEnglish
Article number153508
JournalApplied Physics Letters
Volume99
Issue number15
DOIs
StatePublished - 10 10 2011

Fingerprint

Dive into the research topics of 'Characterization of enhancement-mode AlGaN/GaN high electron mobility transistor using N2O plasma oxidation technology'. Together they form a unique fingerprint.

Cite this