Characterization of GaAs Mesfet Gate Capacitances

Chih Ching Shih; Bing J. Sheu; Huy M. Le

doi:10.1109/4.335

Characterization of GaAs Mesfet Gate Capacitances

Chih Ching Shih, Bing J. Sheu, Huy M. Le

University of Southern California

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

An accurate and simple technique to characterize gate capacitances of small-geometry gallium-arsenide (GaAs) MESFET's is presented. The gate capacitive current is converted into voltage and detected by a lock-in amplifier. Subfemtofarad accuracy is achieved. A set of MESFET's with minimum channel length of 0.8 üm and various channel widths has been accurately characterized. The gate-to-drain and gate-to-source capacitances show strong bias dependences.

Original language	English
Pages (from-to)	878-880
Number of pages	3
Journal	IEEE Journal of Solid-State Circuits
Volume	23
Issue number	3
DOIs	https://doi.org/10.1109/4.335
State	Published - 06 1988
Externally published	Yes

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abstract = "An accurate and simple technique to characterize gate capacitances of small-geometry gallium-arsenide (GaAs) MESFET's is presented. The gate capacitive current is converted into voltage and detected by a lock-in amplifier. Subfemtofarad accuracy is achieved. A set of MESFET's with minimum channel length of 0.8 {\"u}m and various channel widths has been accurately characterized. The gate-to-drain and gate-to-source capacitances show strong bias dependences.",

author = "Shih, {Chih Ching} and Sheu, {Bing J.} and Le, {Huy M.}",

year = "1988",

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AU - Sheu, Bing J.

AU - Le, Huy M.

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N2 - An accurate and simple technique to characterize gate capacitances of small-geometry gallium-arsenide (GaAs) MESFET's is presented. The gate capacitive current is converted into voltage and detected by a lock-in amplifier. Subfemtofarad accuracy is achieved. A set of MESFET's with minimum channel length of 0.8 üm and various channel widths has been accurately characterized. The gate-to-drain and gate-to-source capacitances show strong bias dependences.

AB - An accurate and simple technique to characterize gate capacitances of small-geometry gallium-arsenide (GaAs) MESFET's is presented. The gate capacitive current is converted into voltage and detected by a lock-in amplifier. Subfemtofarad accuracy is achieved. A set of MESFET's with minimum channel length of 0.8 üm and various channel widths has been accurately characterized. The gate-to-drain and gate-to-source capacitances show strong bias dependences.

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Characterization of GaAs Mesfet Gate Capacitances

Abstract

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