Characterization of GaAs Mesfet Gate Capacitances

Chih Ching Shih, Bing J. Sheu, Huy M. Le

Research output: Contribution to journalJournal Article peer-review

3 Scopus citations


An accurate and simple technique to characterize gate capacitances of small-geometry gallium-arsenide (GaAs) MESFET's is presented. The gate capacitive current is converted into voltage and detected by a lock-in amplifier. Subfemtofarad accuracy is achieved. A set of MESFET's with minimum channel length of 0.8 üm and various channel widths has been accurately characterized. The gate-to-drain and gate-to-source capacitances show strong bias dependences.

Original languageEnglish
Pages (from-to)878-880
Number of pages3
JournalIEEE Journal of Solid-State Circuits
Issue number3
StatePublished - 06 1988
Externally publishedYes


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