Characterization of GaAs Mesfet Gate Capacitances

Chih Ching Shih; Bing J. Sheu; Huy M. Le

doi:10.1109/4.335

Characterization of GaAs Mesfet Gate Capacitances

Chih Ching Shih
, Bing J. Sheu
, Huy M. Le

University of Southern California

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

An accurate and simple technique to characterize gate capacitances of small-geometry gallium-arsenide (GaAs) MESFET's is presented. The gate capacitive current is converted into voltage and detected by a lock-in amplifier. Subfemtofarad accuracy is achieved. A set of MESFET's with minimum channel length of 0.8 üm and various channel widths has been accurately characterized. The gate-to-drain and gate-to-source capacitances show strong bias dependences.

Original language	English
Pages (from-to)	878-880
Number of pages	3
Journal	IEEE Journal of Solid-State Circuits
Volume	23
Issue number	3
DOIs	https://doi.org/10.1109/4.335
State	Published - 06 1988
Externally published	Yes

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title = "Characterization of GaAs Mesfet Gate Capacitances",

abstract = "An accurate and simple technique to characterize gate capacitances of small-geometry gallium-arsenide (GaAs) MESFET's is presented. The gate capacitive current is converted into voltage and detected by a lock-in amplifier. Subfemtofarad accuracy is achieved. A set of MESFET's with minimum channel length of 0.8 {\"u}m and various channel widths has been accurately characterized. The gate-to-drain and gate-to-source capacitances show strong bias dependences.",

author = "Shih, \{Chih Ching\} and Sheu, \{Bing J.\} and Le, \{Huy M.\}",

year = "1988",

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AU - Shih, Chih Ching

AU - Sheu, Bing J.

AU - Le, Huy M.

PY - 1988/6

Y1 - 1988/6

N2 - An accurate and simple technique to characterize gate capacitances of small-geometry gallium-arsenide (GaAs) MESFET's is presented. The gate capacitive current is converted into voltage and detected by a lock-in amplifier. Subfemtofarad accuracy is achieved. A set of MESFET's with minimum channel length of 0.8 üm and various channel widths has been accurately characterized. The gate-to-drain and gate-to-source capacitances show strong bias dependences.

AB - An accurate and simple technique to characterize gate capacitances of small-geometry gallium-arsenide (GaAs) MESFET's is presented. The gate capacitive current is converted into voltage and detected by a lock-in amplifier. Subfemtofarad accuracy is achieved. A set of MESFET's with minimum channel length of 0.8 üm and various channel widths has been accurately characterized. The gate-to-drain and gate-to-source capacitances show strong bias dependences.

UR - https://www.scopus.com/pages/publications/0023360894

U2 - 10.1109/4.335

DO - 10.1109/4.335

M3 - 文章

AN - SCOPUS:0023360894

SN - 0018-9200

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SP - 878

EP - 880

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 3

ER -

Characterization of GaAs Mesfet Gate Capacitances

Abstract

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