@inproceedings{521fa816bfed481bb2f6f6671c1696d6,
title = "Characterization of InN films grown by plasma-assisted MOMBE",
abstract = "In this paper, we report the growth of InN films on sapphire substrate by RF- MOMBE. GaN buffer layer was used to lower the lattice mismatch between InN and sapphire. XRD patterns indicated that the InN films were grown epitaxially along the c-axis direction. In addition, increasing III/V ratio and growth temperature improve the quality of the InN films as well. However, In droplet will appear on the sample surface under the condition with high III/V ratio. Under optimal growth condition, electron mobility was improved from 100 cm2/V-s to 366 cm2/V-,. Experimental results showed that III/V ratio and growth temperature play important roles in the InN epitaxial growth.",
keywords = "InN, RF-MOMBE",
author = "Kuo, {Shou Yi} and Lai, {Fang I.} and Lin, {Woei Tyng} and Chen, {Wei Chun} and Chen, {Jui Pin} and Hsiao, {Chien Nan}",
year = "2011",
doi = "10.1109/INEC.2011.5991698",
language = "英语",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",
note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",
}