Characterization of InN films grown by plasma-assisted MOMBE

Shou Yi Kuo*, Fang I. Lai, Woei Tyng Lin, Wei Chun Chen, Jui Pin Chen, Chien Nan Hsiao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we report the growth of InN films on sapphire substrate by RF- MOMBE. GaN buffer layer was used to lower the lattice mismatch between InN and sapphire. XRD patterns indicated that the InN films were grown epitaxially along the c-axis direction. In addition, increasing III/V ratio and growth temperature improve the quality of the InN films as well. However, In droplet will appear on the sample surface under the condition with high III/V ratio. Under optimal growth condition, electron mobility was improved from 100 cm2/V-s to 366 cm2/V-,. Experimental results showed that III/V ratio and growth temperature play important roles in the InN epitaxial growth.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 06 201124 06 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
Country/TerritoryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • InN
  • RF-MOMBE

Fingerprint

Dive into the research topics of 'Characterization of InN films grown by plasma-assisted MOMBE'. Together they form a unique fingerprint.

Cite this