Characterization of interface fluctuations and emission mechanisms in InGaN/AlGaN multiple quantum wells

Jiunn Chyi Lee; Ya Fen Wu; Chia Hui Fang; Jen Cheng Wang; Tzer En Nee

doi:10.1016/j.physb.2007.09.023

Characterization of interface fluctuations and emission mechanisms in InGaN/AlGaN multiple quantum wells

Jiunn Chyi Lee, Ya Fen Wu, Chia Hui Fang, Jen Cheng Wang, Tzer En Nee^*

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

The InGaN/AlGaN multiple- quantum- well heterostructures were fabricated by metal-organic chemical vapor deposition system. Samples were grown with different indium and aluminum content during the growth of InGaN well layers and AlGaN barrier layers. The exciton-localization effect on the performance of the samples is investigated by means of temperature-dependent photoluminescence measurements. The dependence of optical characteristics on temperature is consistent with recombination mechanisms involving band-tail states. For sample with higher indium content in the well layer, the localization effect is enhanced; in contrast, the effect is weakened for sample with higher aluminum content in the barrier layer.

Original language	English
Pages (from-to)	568-571
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	401-402
DOIs	https://doi.org/10.1016/j.physb.2007.09.023
State	Published - 15 12 2007

Keywords

Band-tail states
Exciton-localization effect
InGaN/AlGaN multiple-quantum-well heterostructures
Photoluminescence
Quantum-confined Stark effect

Access to Document

10.1016/j.physb.2007.09.023

Cite this

@article{432cfb4d128549c3bf820f552582d43c,

title = "Characterization of interface fluctuations and emission mechanisms in InGaN/AlGaN multiple quantum wells",

abstract = "The InGaN/AlGaN multiple- quantum- well heterostructures were fabricated by metal-organic chemical vapor deposition system. Samples were grown with different indium and aluminum content during the growth of InGaN well layers and AlGaN barrier layers. The exciton-localization effect on the performance of the samples is investigated by means of temperature-dependent photoluminescence measurements. The dependence of optical characteristics on temperature is consistent with recombination mechanisms involving band-tail states. For sample with higher indium content in the well layer, the localization effect is enhanced; in contrast, the effect is weakened for sample with higher aluminum content in the barrier layer.",

keywords = "Band-tail states, Exciton-localization effect, InGaN/AlGaN multiple-quantum-well heterostructures, Photoluminescence, Quantum-confined Stark effect",

author = "Lee, \{Jiunn Chyi\} and Wu, \{Ya Fen\} and Fang, \{Chia Hui\} and Wang, \{Jen Cheng\} and Nee, \{Tzer En\}",

year = "2007",

month = dec,

day = "15",

doi = "10.1016/j.physb.2007.09.023",

language = "英语",

volume = "401-402",

pages = "568--571",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Characterization of interface fluctuations and emission mechanisms in InGaN/AlGaN multiple quantum wells

AU - Lee, Jiunn Chyi

AU - Wu, Ya Fen

AU - Fang, Chia Hui

AU - Wang, Jen Cheng

AU - Nee, Tzer En

PY - 2007/12/15

Y1 - 2007/12/15

N2 - The InGaN/AlGaN multiple- quantum- well heterostructures were fabricated by metal-organic chemical vapor deposition system. Samples were grown with different indium and aluminum content during the growth of InGaN well layers and AlGaN barrier layers. The exciton-localization effect on the performance of the samples is investigated by means of temperature-dependent photoluminescence measurements. The dependence of optical characteristics on temperature is consistent with recombination mechanisms involving band-tail states. For sample with higher indium content in the well layer, the localization effect is enhanced; in contrast, the effect is weakened for sample with higher aluminum content in the barrier layer.

AB - The InGaN/AlGaN multiple- quantum- well heterostructures were fabricated by metal-organic chemical vapor deposition system. Samples were grown with different indium and aluminum content during the growth of InGaN well layers and AlGaN barrier layers. The exciton-localization effect on the performance of the samples is investigated by means of temperature-dependent photoluminescence measurements. The dependence of optical characteristics on temperature is consistent with recombination mechanisms involving band-tail states. For sample with higher indium content in the well layer, the localization effect is enhanced; in contrast, the effect is weakened for sample with higher aluminum content in the barrier layer.

KW - Band-tail states

KW - Exciton-localization effect

KW - InGaN/AlGaN multiple-quantum-well heterostructures

KW - Photoluminescence

KW - Quantum-confined Stark effect

UR - https://www.scopus.com/pages/publications/36048989680

U2 - 10.1016/j.physb.2007.09.023

DO - 10.1016/j.physb.2007.09.023

M3 - 文章

AN - SCOPUS:36048989680

SN - 0921-4526

VL - 401-402

SP - 568

EP - 571

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Characterization of interface fluctuations and emission mechanisms in InGaN/AlGaN multiple quantum wells

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this