@inproceedings{d3b1877de241467f92eb8fd8302e125d,
title = "CHARACTERIZATION OF INTRINSIC CAPACITANCES OF SMALL GEOMETRY MOSFET'S.",
abstract = "Summary form only given. A simple and accurate measurement technique for intrinsic gate capacitances has been described. The method can be easily incorporated into an automatic characterization system. Preliminary experimental results suggest that there are some important features in the capacitances of small-geometry MOSFETs which differ significantly from their long-channel counterparts. Further studies on modeling these capacitances are being pursued.",
author = "Sheu, \{B. J.\} and Ko, \{P. K.\} and Hsu, \{F. C.\}",
year = "1984",
language = "英语",
isbn = "4930813085",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Business Cent for Academic Soc Japan",
pages = "80--81",
booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",
}