Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

Hakim Arezki; Kuan I. Ho; Alexandre Jaffré; David Alamarguy; José Alvarez; Jean Paul Kleider; Chao Sung Lai; Mohamed Boutchich

doi:10.1063/1.4913537

Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

Hakim Arezki^*, Kuan I. Ho, Alexandre Jaffré, David Alamarguy, José Alvarez, Jean Paul Kleider, Chao Sung Lai, Mohamed Boutchich

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Large-area graphene film doped with hetero-atoms is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, fuel cells among many others. Here, we report the structural and electronic properties of nitrogen doped multilayer graphene on 4H-SiC (0001). The incorporation of nitrogen during the growth causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. The analysis of micro-Raman mapping of G, D, 2D bands shows a predominantly trilayer graphene with a D band inherent to doping and inhomogeneous dopant distribution at the step edges. Ultraviolet photoelectron spectroscopy (UPS) indicates an n type work function (WF) of 4.1 eV. In addition, a top gate FET device was fabricated showing n-type I-V characteristic after the desorption of oxygen with high electron and holes mobilities.

Original language	English
Title of host publication	Irago Conference 2014
Editors	Renu Wadhwa, Mohamed Boutchich, Adarsh Sandhu, Shinya Maenosono, Hiroshi Okada
Publisher	American Institute of Physics Inc.
Pages	8-13
Number of pages	6
ISBN (Electronic)	9780735412910
DOIs	https://doi.org/10.1063/1.4913537
State	Published - 2015
Event	Irago Conference 2014: A 360 Degree Outlook at Critical Scientific and Technological Challenges for a Sustainable Society - Tsukuba-City, Ibaraki, Japan Duration: 06 11 2014 → 07 11 2014

Publication series

Name	AIP Conference Proceedings
Volume	1649
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	Irago Conference 2014: A 360 Degree Outlook at Critical Scientific and Technological Challenges for a Sustainable Society
Country/Territory	Japan
City	Tsukuba-City, Ibaraki
Period	06/11/14 → 07/11/14

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.4913537

Cite this

Arezki, H., Ho, K. I., Jaffré, A., Alamarguy, D., Alvarez, J., Kleider, J. P., Lai, C. S., & Boutchich, M. (2015). Characterization of N-doped multilayer graphene grown on 4H-SiC (0001). In R. Wadhwa, M. Boutchich, A. Sandhu, S. Maenosono, & H. Okada (Eds.), Irago Conference 2014 (pp. 8-13). (AIP Conference Proceedings; Vol. 1649). American Institute of Physics Inc.. https://doi.org/10.1063/1.4913537

@inproceedings{2edd6f65242b49e297211051dd14aa90,

title = "Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)",

abstract = "Large-area graphene film doped with hetero-atoms is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, fuel cells among many others. Here, we report the structural and electronic properties of nitrogen doped multilayer graphene on 4H-SiC (0001). The incorporation of nitrogen during the growth causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. The analysis of micro-Raman mapping of G, D, 2D bands shows a predominantly trilayer graphene with a D band inherent to doping and inhomogeneous dopant distribution at the step edges. Ultraviolet photoelectron spectroscopy (UPS) indicates an n type work function (WF) of 4.1 eV. In addition, a top gate FET device was fabricated showing n-type I-V characteristic after the desorption of oxygen with high electron and holes mobilities.",

author = "Hakim Arezki and Ho, \{Kuan I.\} and Alexandre Jaffr{\'e} and David Alamarguy and Jos{\'e} Alvarez and Kleider, \{Jean Paul\} and Lai, \{Chao Sung\} and Mohamed Boutchich",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.; Irago Conference 2014: A 360 Degree Outlook at Critical Scientific and Technological Challenges for a Sustainable Society ; Conference date: 06-11-2014 Through 07-11-2014",

year = "2015",

doi = "10.1063/1.4913537",

language = "英语",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics Inc.",

pages = "8--13",

editor = "Renu Wadhwa and Mohamed Boutchich and Adarsh Sandhu and Shinya Maenosono and Hiroshi Okada",

booktitle = "Irago Conference 2014",

}

Arezki, H, Ho, KI, Jaffré, A, Alamarguy, D, Alvarez, J, Kleider, JP, Lai, CS & Boutchich, M 2015, Characterization of N-doped multilayer graphene grown on 4H-SiC (0001). in R Wadhwa, M Boutchich, A Sandhu, S Maenosono & H Okada (eds), Irago Conference 2014. AIP Conference Proceedings, vol. 1649, American Institute of Physics Inc., pp. 8-13, Irago Conference 2014: A 360 Degree Outlook at Critical Scientific and Technological Challenges for a Sustainable Society, Tsukuba-City, Ibaraki, Japan, 06/11/14. https://doi.org/10.1063/1.4913537

Characterization of N-doped multilayer graphene grown on 4H-SiC (0001). / Arezki, Hakim; Ho, Kuan I.; Jaffré, Alexandre et al.
Irago Conference 2014. ed. / Renu Wadhwa; Mohamed Boutchich; Adarsh Sandhu; Shinya Maenosono; Hiroshi Okada. American Institute of Physics Inc., 2015. p. 8-13 (AIP Conference Proceedings; Vol. 1649).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

AU - Arezki, Hakim

AU - Ho, Kuan I.

AU - Jaffré, Alexandre

AU - Alamarguy, David

AU - Alvarez, José

AU - Kleider, Jean Paul

AU - Lai, Chao Sung

AU - Boutchich, Mohamed

PY - 2015

Y1 - 2015

N2 - Large-area graphene film doped with hetero-atoms is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, fuel cells among many others. Here, we report the structural and electronic properties of nitrogen doped multilayer graphene on 4H-SiC (0001). The incorporation of nitrogen during the growth causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. The analysis of micro-Raman mapping of G, D, 2D bands shows a predominantly trilayer graphene with a D band inherent to doping and inhomogeneous dopant distribution at the step edges. Ultraviolet photoelectron spectroscopy (UPS) indicates an n type work function (WF) of 4.1 eV. In addition, a top gate FET device was fabricated showing n-type I-V characteristic after the desorption of oxygen with high electron and holes mobilities.

AB - Large-area graphene film doped with hetero-atoms is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, fuel cells among many others. Here, we report the structural and electronic properties of nitrogen doped multilayer graphene on 4H-SiC (0001). The incorporation of nitrogen during the growth causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. The analysis of micro-Raman mapping of G, D, 2D bands shows a predominantly trilayer graphene with a D band inherent to doping and inhomogeneous dopant distribution at the step edges. Ultraviolet photoelectron spectroscopy (UPS) indicates an n type work function (WF) of 4.1 eV. In addition, a top gate FET device was fabricated showing n-type I-V characteristic after the desorption of oxygen with high electron and holes mobilities.

UR - https://www.scopus.com/pages/publications/85063835101

U2 - 10.1063/1.4913537

DO - 10.1063/1.4913537

M3 - 会议稿件

AN - SCOPUS:85063835101

T3 - AIP Conference Proceedings

SP - 8

EP - 13

BT - Irago Conference 2014

A2 - Wadhwa, Renu

A2 - Boutchich, Mohamed

A2 - Sandhu, Adarsh

A2 - Maenosono, Shinya

A2 - Okada, Hiroshi

PB - American Institute of Physics Inc.

T2 - Irago Conference 2014: A 360 Degree Outlook at Critical Scientific and Technological Challenges for a Sustainable Society

Y2 - 6 November 2014 through 7 November 2014

ER -

Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

Abstract

Publication series

Conference

Bibliographical note

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this