Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system

Kuang Po Hsueh; Wen Yen Lin; Hsien Chin Chiu; Hsiang Chun Wang; Jinn Kong Sheu; Yu Hsiang Yeh

doi:10.1109/IBP.2015.7230765

Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system

Kuang Po Hsueh, Wen Yen Lin, Hsien Chin Chiu, Hsiang Chun Wang, Jinn Kong Sheu, Yu Hsiang Yeh

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Niobium-doped Mg_xZn_1-xO (Nb-MZO) mixed oxide films with high transmittance were successfully deposited on sapphire substrates by a radio-frequency (RF) magnetron sputtering using a 4-in ZnO/MgO/NbO_x (75/20/5 wt %) target. In this study, the films were analyzed through a Hall test, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and transmittance. The XRD results showed MgO₂ (002) wurtzite peak as well as an Mg_xZn_1-xO (111)-cubic peak. The absorption edges of these Nb-MZO films were located in the UV region, implying that the MgO content of the Nb-MZO layer increased the bandgaps. The XPS spectra of Nb-MZO films were also used to analyze the composition of the as-grown and annealed Nb-MZO films. These results indicate that the Nb-MZO films are ideal for use as transparent contact layers.

Original language	English
Title of host publication	IBP 2015 - 2015 IEEE International Broadband and Photonics Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	55-59
Number of pages	5
ISBN (Electronic)	9781479984756
DOIs	https://doi.org/10.1109/IBP.2015.7230765
State	Published - 31 08 2015
Event	IEEE International Broadband and Photonics Conference, IBP 2015 - Bali, Indonesia Duration: 23 04 2015 → 25 04 2015

Publication series

Name	IBP 2015 - 2015 IEEE International Broadband and Photonics Conference

Conference

Conference	IEEE International Broadband and Photonics Conference, IBP 2015
Country/Territory	Indonesia
City	Bali
Period	23/04/15 → 25/04/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

MgO
NbO
X-ray diffraction
ZnO
transparent conductive oxide

Access to Document

10.1109/IBP.2015.7230765

Cite this

Hsueh, K. P., Lin, W. Y., Chiu, H. C., Wang, H. C., Sheu, J. K., & Yeh, Y. H. (2015). Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system. In IBP 2015 - 2015 IEEE International Broadband and Photonics Conference (pp. 55-59). Article 7230765 (IBP 2015 - 2015 IEEE International Broadband and Photonics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IBP.2015.7230765

Hsueh, Kuang Po ; Lin, Wen Yen ; Chiu, Hsien Chin et al. / Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system. IBP 2015 - 2015 IEEE International Broadband and Photonics Conference. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 55-59 (IBP 2015 - 2015 IEEE International Broadband and Photonics Conference).

@inproceedings{2631e87856d04e38ba03774a237dacea,

title = "Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system",

abstract = "Niobium-doped MgxZn1-xO (Nb-MZO) mixed oxide films with high transmittance were successfully deposited on sapphire substrates by a radio-frequency (RF) magnetron sputtering using a 4-in ZnO/MgO/NbOx (75/20/5 wt %) target. In this study, the films were analyzed through a Hall test, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and transmittance. The XRD results showed MgO2 (002) wurtzite peak as well as an MgxZn1-xO (111)-cubic peak. The absorption edges of these Nb-MZO films were located in the UV region, implying that the MgO content of the Nb-MZO layer increased the bandgaps. The XPS spectra of Nb-MZO films were also used to analyze the composition of the as-grown and annealed Nb-MZO films. These results indicate that the Nb-MZO films are ideal for use as transparent contact layers.",

keywords = "MgO, NbO, X-ray diffraction, ZnO, transparent conductive oxide",

author = "Hsueh, {Kuang Po} and Lin, {Wen Yen} and Chiu, {Hsien Chin} and Wang, {Hsiang Chun} and Sheu, {Jinn Kong} and Yeh, {Yu Hsiang}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Broadband and Photonics Conference, IBP 2015 ; Conference date: 23-04-2015 Through 25-04-2015",

year = "2015",

month = aug,

day = "31",

doi = "10.1109/IBP.2015.7230765",

language = "英语",

series = "IBP 2015 - 2015 IEEE International Broadband and Photonics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "55--59",

booktitle = "IBP 2015 - 2015 IEEE International Broadband and Photonics Conference",

address = "美国",

}

Hsueh, KP, Lin, WY, Chiu, HC, Wang, HC, Sheu, JK & Yeh, YH 2015, Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system. in IBP 2015 - 2015 IEEE International Broadband and Photonics Conference., 7230765, IBP 2015 - 2015 IEEE International Broadband and Photonics Conference, Institute of Electrical and Electronics Engineers Inc., pp. 55-59, IEEE International Broadband and Photonics Conference, IBP 2015, Bali, Indonesia, 23/04/15. https://doi.org/10.1109/IBP.2015.7230765

Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system. / Hsueh, Kuang Po; Lin, Wen Yen; Chiu, Hsien Chin et al.
IBP 2015 - 2015 IEEE International Broadband and Photonics Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 55-59 7230765 (IBP 2015 - 2015 IEEE International Broadband and Photonics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system

AU - Hsueh, Kuang Po

AU - Lin, Wen Yen

AU - Chiu, Hsien Chin

AU - Wang, Hsiang Chun

AU - Sheu, Jinn Kong

AU - Yeh, Yu Hsiang

PY - 2015/8/31

Y1 - 2015/8/31

N2 - Niobium-doped MgxZn1-xO (Nb-MZO) mixed oxide films with high transmittance were successfully deposited on sapphire substrates by a radio-frequency (RF) magnetron sputtering using a 4-in ZnO/MgO/NbOx (75/20/5 wt %) target. In this study, the films were analyzed through a Hall test, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and transmittance. The XRD results showed MgO2 (002) wurtzite peak as well as an MgxZn1-xO (111)-cubic peak. The absorption edges of these Nb-MZO films were located in the UV region, implying that the MgO content of the Nb-MZO layer increased the bandgaps. The XPS spectra of Nb-MZO films were also used to analyze the composition of the as-grown and annealed Nb-MZO films. These results indicate that the Nb-MZO films are ideal for use as transparent contact layers.

AB - Niobium-doped MgxZn1-xO (Nb-MZO) mixed oxide films with high transmittance were successfully deposited on sapphire substrates by a radio-frequency (RF) magnetron sputtering using a 4-in ZnO/MgO/NbOx (75/20/5 wt %) target. In this study, the films were analyzed through a Hall test, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and transmittance. The XRD results showed MgO2 (002) wurtzite peak as well as an MgxZn1-xO (111)-cubic peak. The absorption edges of these Nb-MZO films were located in the UV region, implying that the MgO content of the Nb-MZO layer increased the bandgaps. The XPS spectra of Nb-MZO films were also used to analyze the composition of the as-grown and annealed Nb-MZO films. These results indicate that the Nb-MZO films are ideal for use as transparent contact layers.

KW - MgO

KW - NbO

KW - X-ray diffraction

KW - ZnO

KW - transparent conductive oxide

UR - http://www.scopus.com/inward/record.url?scp=84960325106&partnerID=8YFLogxK

U2 - 10.1109/IBP.2015.7230765

DO - 10.1109/IBP.2015.7230765

M3 - 会议稿件

AN - SCOPUS:84960325106

T3 - IBP 2015 - 2015 IEEE International Broadband and Photonics Conference

SP - 55

EP - 59

BT - IBP 2015 - 2015 IEEE International Broadband and Photonics Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Broadband and Photonics Conference, IBP 2015

Y2 - 23 April 2015 through 25 April 2015

ER -

Hsueh KP, Lin WY, Chiu HC, Wang HC, Sheu JK, Yeh YH. Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system. In IBP 2015 - 2015 IEEE International Broadband and Photonics Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 55-59. 7230765. (IBP 2015 - 2015 IEEE International Broadband and Photonics Conference). doi: 10.1109/IBP.2015.7230765

Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this