Abstract
The piezoresistive characteristics of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) pressure sensors with inter-digitated (IDE) and cross-point electrode (CPE) structures have been investigated. A small variation of the resistance of the pressure sensors with IDE without bottom indium-tin-oxide (b-ITO) film and with CPE structures was observed owing to the single carrier-conducting pathway. For the IDE pressure sensors with b-ITO, the piezoresistive characteristics at low and high pressure were similar to those of the pressure sensors with IDE without b-ITO and with CPE structures, respectively, leading to increased piezoresistive pressure sensitivity as the PEDOT:PSS film thickness decreased. A maximum sensitivity of more than 42 kΩ/Pa was achieved. When the normal pressure was applied, the increased number of conducting points or the reduced distance between the PEDOT oligomers within the PEDOT:PSS film resulted in a decrease of the resistance. The piezoresistive pressure sensors with a single carrier-conducting pathway, i.e., IDE without b-ITO and CPE structures, exhibited a small relaxation time and a superior reversible operation, which can be advantageous for fast piezoresistive response applications.
| Original language | English |
|---|---|
| Pages (from-to) | 818-831 |
| Number of pages | 14 |
| Journal | Sensors |
| Volume | 15 |
| Issue number | 1 |
| DOIs | |
| State | Published - 05 01 2015 |
Bibliographical note
Publisher Copyright:© 2015 by the authors.
Keywords
- Cross-point
- Inter-digitated
- Piezoresistive
- Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)
- Relaxation time