Characterization of the carrier dynamics and interface-state charge fluctuations in quaternary AlInGaN multiple quantum well heterostructures

Chih Chun Ke*, Cheng Wei Hung, Da Chuan Kuo, Wei Jen Chen, Hui Tang Shen, Ya Fen Wu, Jen Cheng Wang, Tzer En Nee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Nitride-based light-emitting diodes (LEDs) have recently attracted to understand the emission mechanisms in novel multiple quantum well (MQW) heterosturctures. To understand substantially the unique spectral response, it is necessary to examine the carrier transport behavior. In this work, we studied the unique correlations between the carrier dynamics and optical characteristics of the quaternary AlInGaN MQW heterostructures with different barrier widths. It has been found that the photoluminescence peak energy of quaternary AlInGaN MQW blueshifts when decreasing the barrier width. This is attributed to the redistribution among the well and barrier of the strong electrostatic fields induced by polarization effect. It resulted in not only the diminutions of the charge density induced by piezoelectric field, but also the increments of the interface-state charge distribution from the collective influence of alloy disorder and interface roughness. We resort the Arrhenius plots to demonstrate the localized effect originated from indium fluctuation. Our results show the exciton-localization effect can be enhanced monotonically by increasing the barrier widths. On the other hand, we corroborated the surface charge density increased while increasing barrier widths between the epitaxial layers in this investigation.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices II
StatePublished - 2007
EventGallium Nitride Materials and Devices II - San Jose, CA, United States
Duration: 22 01 200725 01 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceGallium Nitride Materials and Devices II
Country/TerritoryUnited States
CitySan Jose, CA


  • Barrier width
  • Carrier confinement
  • Multiple quantum well


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