Characterization on pH sensing and corrosion-resistant of HfTaO membrane with post RTA treatment for food industry

Chao Sung Lai*, Yi Ting Lin, Cheng En Lue, Chia Ming Yang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

1 Scopus citations

Abstract

This paper present a approach for improving the sensitivity, light immunity, chemical resistance by post rapid thermal annealing treatment of the HfTaO sensing membrane. Binary metal oxide layer, HfTaO, which was deposited on thermally oxidized silicon wafers by rf. reactive sputtering and first proposed to be the sensing membrane of electrolyte insulator semiconductor structure. When heat-treated in 02 ambient at 900 °C for 1 min, HfTaO sensing membrane showed high sensitivity (51.7 mV/pH) and low light induced effect (67.3 mV). For the cleaning-in-place test (base-DI water-acid cycling), HfTaO sensing membrane with RTA treatment at 700 °C, which anti-corrosive ability was optimized to 20 cycles and shows high performance for food industry.

Original languageEnglish
Pages (from-to)720-724
Number of pages5
JournalSensor Letters
Volume8
Issue number5
DOIs
StatePublished - 10 2010

Keywords

  • Clean-in-place
  • Electrolyte-insulator-semiconductor
  • HfTaO
  • Rapid thermal annealing

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