Characterizations of MoTiO5 flash memory devices with post-annealing

Chyuan Haur Kao, Hsiang Chen*, Su Zhien Chen, Yu Jie Chen, Yu Cheng Chu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

7 Scopus citations


In this study, high-K MoTiO5 dielectrics were applied as charge trapping layers in fabricated metal-oxide-high-K MoTiO5-oxide-Si-type memory devices. Among the applied MoTiO5 trapping layer treatment conditions, annealing at 900 °C yielded devices that exhibited superior memory performance, such as a larger memory window and faster programming/erasing speed. Multiple material analyses, namely X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, confirmed that annealing at 900 °C can improve the material quality as a result of crystallization. The fabricated MoTiO5-based memory devices show potential for future commercial memory device applications.

Original languageEnglish
Pages (from-to)564-567
Number of pages4
JournalThin Solid Films
Issue numberPB
StatePublished - 03 11 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V.


  • Annealing
  • Crystallization
  • Memory window
  • MoTiO Flash memory


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