Characterizations of MoTiO₅ flash memory devices with post-annealing

In this study, high-K MoTiO₅ dielectrics were applied as charge trapping layers in fabricated metal-oxide-high-K MoTiO₅-oxide-Si-type memory devices. Among the applied MoTiO₅ trapping layer treatment conditions, annealing at 900 °C yielded devices that exhibited superior memory performance, such as a larger memory window and faster programming/erasing speed. Multiple material analyses, namely X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, confirmed that annealing at 900 °C can improve the material quality as a result of crystallization. The fabricated MoTiO₅-based memory devices show potential for future commercial memory device applications.