Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH 3 nitridation and N 2O RTA treatment

Tung Ming Pan; Tan Fu Lei; Huang Chun Wen; Tien Sheng Chao

doi:10.1109/16.918238

Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH ₃ nitridation and N ₂O RTA treatment

Tung Ming Pan^*
, Tan Fu Lei
, Huang Chun Wen
, Tien Sheng Chao

^*Corresponding author for this work

IEEE
National Yang Ming Chiao Tung University
National Tsing Hua University

Research output: Contribution to journal › Journal Article › peer-review

16 Scopus citations

Abstract

In this paper, we developed a new method to grow robust ultrathin oxynitride (E _OT = 18 Å) film with effective dielectric constant of 7.15. By NH ₃-nitridation of Si substrate, grown ultrathin Si ₃N ₄ with N ₂O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.

Original language	English
Pages (from-to)	907-912
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	5
DOIs	https://doi.org/10.1109/16.918238
State	Published - 05 2001
Externally published	Yes

Keywords

N O
NH
Nitridation
Oxynitride
Rapid thermal annealing (RTA)
Si N

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10.1109/16.918238

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title = "Characterized of ultrathin oxynitride (18-21 {\AA}) gate dielectrics by NH 3 nitridation and N 2O RTA treatment",

abstract = "In this paper, we developed a new method to grow robust ultrathin oxynitride (E OT = 18 {\AA}) film with effective dielectric constant of 7.15. By NH 3-nitridation of Si substrate, grown ultrathin Si 3N 4 with N 2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.",

keywords = "N O, NH, Nitridation, Oxynitride, Rapid thermal annealing (RTA), Si N",

author = "Pan, \{Tung Ming\} and Lei, \{Tan Fu\} and Wen, \{Huang Chun\} and Chao, \{Tien Sheng\}",

year = "2001",

month = may,

doi = "10.1109/16.918238",

language = "英语",

volume = "48",

pages = "907--912",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH 3 nitridation and N 2O RTA treatment

AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Wen, Huang Chun

AU - Chao, Tien Sheng

PY - 2001/5

Y1 - 2001/5

N2 - In this paper, we developed a new method to grow robust ultrathin oxynitride (E OT = 18 Å) film with effective dielectric constant of 7.15. By NH 3-nitridation of Si substrate, grown ultrathin Si 3N 4 with N 2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.

AB - In this paper, we developed a new method to grow robust ultrathin oxynitride (E OT = 18 Å) film with effective dielectric constant of 7.15. By NH 3-nitridation of Si substrate, grown ultrathin Si 3N 4 with N 2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.

KW - N O

KW - NH

KW - Nitridation

KW - Oxynitride

KW - Rapid thermal annealing (RTA)

KW - Si N

UR - https://www.scopus.com/pages/publications/0035340573

U2 - 10.1109/16.918238

DO - 10.1109/16.918238

M3 - 文章

AN - SCOPUS:0035340573

SN - 0018-9383

VL - 48

SP - 907

EP - 912

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH ₃ nitridation and N ₂O RTA treatment

Abstract

Keywords

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