@inproceedings{525fc6e55f8f4db09190ca4ac5d54ee2,
title = "Characterizing reverse-bias electroluminescence of InGaN/GaN LEDs",
abstract = "The reverse-bias operation of the InGaN LED device can shed a light on device reliability problems. Our goal is to use X-ray fluorescent (XRF) element analysis, 2D electroluminescence (EL) observations, and electrical measurements to visualize the current leakage and evaluate the fresh device performance. Hot electron- induced emissions due to a leakage current may be a mechanism of the reverse-bias emission. The reverse-bias light emission is relevant to reliability problems because of its combination of optical characterization and electrical performance. Besides, a nondestructive screening method has been built to detect the leakage current path around the metal contact and evaluate fresh LED device quality.",
keywords = "Electroluminescence, Hot carrier induced emission, Ingan led, Leakage current, Reverse bias luminescence",
author = "Hsiang Chen and Kao, \{Chyuan Haur\} and Lu, \{Tien Chang\}",
year = "2011",
language = "英语",
isbn = "1893580172",
series = "2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011",
booktitle = "2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011",
note = "2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011 ; Conference date: 16-05-2011 Through 19-05-2011",
}