Charge Storage and Data Retention Characteristics for the Forming Gas Annealed Gd2O3-Nanocrystal Nonvolatile Memory

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2011
Event	International Conference on Materials for Advanced Technologies (ICMAT 2011) - Singapore Duration: 26 06 2011 → 01 07 2011

Conference	International Conference on Materials for Advanced Technologies (ICMAT 2011)
Period	26/06/11 → 01/07/11

Cite this

@conference{bb51ec06423141bc9f9b374b6d1d8579,

title = "Charge Storage and Data Retention Characteristics for the Forming Gas Annealed Gd2O3-Nanocrystal Nonvolatile Memory",

author = "Jer-Chyi Wang and Lin, \{Chih Ting\} and Chen, \{Chia Hsin\} and Huang, \{Po Wei\} and Liao, \{Chin Hsiang\}",

year = "2011",

language = "American English",

note = "International Conference on Materials for Advanced Technologies (ICMAT 2011) ; Conference date: 26-06-2011 Through 01-07-2011",

}

TY - CONF

T1 - Charge Storage and Data Retention Characteristics for the Forming Gas Annealed Gd2O3-Nanocrystal Nonvolatile Memory

AU - Wang, Jer-Chyi

AU - Lin, Chih Ting

AU - Chen, Chia Hsin

AU - Huang, Po Wei

AU - Liao, Chin Hsiang

PY - 2011

Y1 - 2011

M3 - Proceeding

T2 - International Conference on Materials for Advanced Technologies (ICMAT 2011)

Y2 - 26 June 2011 through 1 July 2011

ER -