Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

K. Das, M. NandaGoswami, R. Mahapatra, G. S. Kar, A. Dhar, H. N. Acharya, S. Maikap, Je Hun Lee, S. K. Ray*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

68 Scopus citations

Abstract

Fabrication of metal-oxide-semiconductor capacitors with a trilayer sructure was performed. The structure consists of the cap gate oxide, sputtered SiGe layers and thermally grown tunnel oxide. The trilayer structures were rapid thermal annealed at 100°C in nitrogen atmosphere for different durations. The optical and charge storage characteristics of trilayer structures were studied through photoluminescence spectroscopy and capacitance-voltage measurements.

Original languageEnglish
Pages (from-to)1386-1388
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number8
DOIs
StatePublished - 23 02 2004
Externally publishedYes

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