Abstract
Fabrication of metal-oxide-semiconductor capacitors with a trilayer sructure was performed. The structure consists of the cap gate oxide, sputtered SiGe layers and thermally grown tunnel oxide. The trilayer structures were rapid thermal annealed at 100°C in nitrogen atmosphere for different durations. The optical and charge storage characteristics of trilayer structures were studied through photoluminescence spectroscopy and capacitance-voltage measurements.
Original language | English |
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Pages (from-to) | 1386-1388 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 8 |
DOIs | |
State | Published - 23 02 2004 |
Externally published | Yes |