Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

K. Das; M. NandaGoswami; R. Mahapatra; G. S. Kar; A. Dhar; H. N. Acharya; S. Maikap; Je Hun Lee; S. K. Ray

doi:10.1063/1.1646750

Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

K. Das
, M. NandaGoswami
, R. Mahapatra
, G. S. Kar
, A. Dhar
, H. N. Acharya
, S. Maikap
, Je Hun Lee
, S. K. Ray^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

68 Scopus citations

Abstract

Fabrication of metal-oxide-semiconductor capacitors with a trilayer sructure was performed. The structure consists of the cap gate oxide, sputtered SiGe layers and thermally grown tunnel oxide. The trilayer structures were rapid thermal annealed at 100°C in nitrogen atmosphere for different durations. The optical and charge storage characteristics of trilayer structures were studied through photoluminescence spectroscopy and capacitance-voltage measurements.

Original language	English
Pages (from-to)	1386-1388
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	8
DOIs	https://doi.org/10.1063/1.1646750
State	Published - 23 02 2004
Externally published	Yes

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title = "Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures",

abstract = "Fabrication of metal-oxide-semiconductor capacitors with a trilayer sructure was performed. The structure consists of the cap gate oxide, sputtered SiGe layers and thermally grown tunnel oxide. The trilayer structures were rapid thermal annealed at 100°C in nitrogen atmosphere for different durations. The optical and charge storage characteristics of trilayer structures were studied through photoluminescence spectroscopy and capacitance-voltage measurements.",

author = "K. Das and M. NandaGoswami and R. Mahapatra and Kar, \{G. S.\} and A. Dhar and Acharya, \{H. N.\} and S. Maikap and Lee, \{Je Hun\} and Ray, \{S. K.\}",

year = "2004",

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doi = "10.1063/1.1646750",

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volume = "84",

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publisher = "American Institute of Physics",

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T1 - Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

AU - Das, K.

AU - NandaGoswami, M.

AU - Mahapatra, R.

AU - Kar, G. S.

AU - Dhar, A.

AU - Acharya, H. N.

AU - Maikap, S.

AU - Lee, Je Hun

AU - Ray, S. K.

PY - 2004/2/23

Y1 - 2004/2/23

N2 - Fabrication of metal-oxide-semiconductor capacitors with a trilayer sructure was performed. The structure consists of the cap gate oxide, sputtered SiGe layers and thermally grown tunnel oxide. The trilayer structures were rapid thermal annealed at 100°C in nitrogen atmosphere for different durations. The optical and charge storage characteristics of trilayer structures were studied through photoluminescence spectroscopy and capacitance-voltage measurements.

AB - Fabrication of metal-oxide-semiconductor capacitors with a trilayer sructure was performed. The structure consists of the cap gate oxide, sputtered SiGe layers and thermally grown tunnel oxide. The trilayer structures were rapid thermal annealed at 100°C in nitrogen atmosphere for different durations. The optical and charge storage characteristics of trilayer structures were studied through photoluminescence spectroscopy and capacitance-voltage measurements.

UR - https://www.scopus.com/pages/publications/1642281180

U2 - 10.1063/1.1646750

DO - 10.1063/1.1646750

M3 - 文章

AN - SCOPUS:1642281180

SN - 0003-6951

VL - 84

SP - 1386

EP - 1388

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

Abstract

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