Charge storage characteristics of ALD high-k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices for nanoscale NAND applications

Siddheswar Maikap, S. Z. Rahaman, W. Banerjee, A. Das, C. H. Lin, P. J. Tzeng, S. S. Tzeng, P. W. Li, M. J. Tsai

Research output: Contribution to conferenceProceeding

Original languageAmerican English
StatePublished - 2008
Event2008 International Electron Devices and Materials Symposia (IEDMS 2008) - Taichung,Taiwan
Duration: 28 11 200829 11 2008

Conference

Conference2008 International Electron Devices and Materials Symposia (IEDMS 2008)
Period28/11/0829/11/08

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