Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles

Jer Chyi Wang; Chin Hsiang Liao; Chih Ting Lin; Ruey Dar Chang; Li Chun Chang; Chih I. Wu; Jung Hung Chang

doi:10.1016/j.cap.2015.02.010

Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles

Jer Chyi Wang^*
, Chin Hsiang Liao
, Chih Ting Lin
, Ruey Dar Chang
, Li Chun Chang
, Chih I. Wu
, Jung Hung Chang

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

Carrier injection and charge loss characteristics of nonvolatile memories with chemically-synthesized (CS) and vacuum-deposited (VD) gold nanoparticles (Au-NPs) have been investigated. Compared to CS counterparts, the memories with VD Au-NPs exhibit a higher dot density of 3.77 × 10¹¹ cm^-2, leading to a larger memory window. Further, the energy from valence-band edge to vacuum level (E_VB-vac) of tunneling oxide for the samples with CS and VD Au-NPs is found to be 9.04 and 9.85 eV respectively. The small E_VB-vac value of the memories with CS Au-NPs is resulted from the formation of a thin chemical oxide (SiO_x) on thermally-grown SiO₂ tunneling layer during the chemically synthesized process, contributing to a slow erasing behavior. Besides, the programming of the memories with VD Au-NPs is saturated at high gate bias, which has been well-explained by the electrons induced potential coupling between Au-NPs. Superior data retention property and high temperature dependence of charge loss are observed for the memories with CS Au-NPs, which can be ascribed to the thick tunneling oxide layer by the additional SiO_x film.

Original language	English
Pages (from-to)	535-540
Number of pages	6
Journal	Current Applied Physics
Volume	15
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2015.02.010
State	Published - 04 2015

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Publisher Copyright:
© 2015 Elsevier B.V.

Keywords

Chemically-synthesized
Gold nanoparticle
Potential coupling
Vacuum-deposited

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title = "Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles",

abstract = "Carrier injection and charge loss characteristics of nonvolatile memories with chemically-synthesized (CS) and vacuum-deposited (VD) gold nanoparticles (Au-NPs) have been investigated. Compared to CS counterparts, the memories with VD Au-NPs exhibit a higher dot density of 3.77 × 1011 cm-2, leading to a larger memory window. Further, the energy from valence-band edge to vacuum level (EVB-vac) of tunneling oxide for the samples with CS and VD Au-NPs is found to be 9.04 and 9.85 eV respectively. The small EVB-vac value of the memories with CS Au-NPs is resulted from the formation of a thin chemical oxide (SiOx) on thermally-grown SiO2 tunneling layer during the chemically synthesized process, contributing to a slow erasing behavior. Besides, the programming of the memories with VD Au-NPs is saturated at high gate bias, which has been well-explained by the electrons induced potential coupling between Au-NPs. Superior data retention property and high temperature dependence of charge loss are observed for the memories with CS Au-NPs, which can be ascribed to the thick tunneling oxide layer by the additional SiOx film.",

keywords = "Chemically-synthesized, Gold nanoparticle, Potential coupling, Vacuum-deposited",

author = "Wang, \{Jer Chyi\} and Liao, \{Chin Hsiang\} and Lin, \{Chih Ting\} and Chang, \{Ruey Dar\} and Chang, \{Li Chun\} and Wu, \{Chih I.\} and Chang, \{Jung Hung\}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = apr,

doi = "10.1016/j.cap.2015.02.010",

language = "英语",

volume = "15",

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TY - JOUR

T1 - Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles

AU - Wang, Jer Chyi

AU - Liao, Chin Hsiang

AU - Lin, Chih Ting

AU - Chang, Ruey Dar

AU - Chang, Li Chun

AU - Wu, Chih I.

AU - Chang, Jung Hung

PY - 2015/4

Y1 - 2015/4

N2 - Carrier injection and charge loss characteristics of nonvolatile memories with chemically-synthesized (CS) and vacuum-deposited (VD) gold nanoparticles (Au-NPs) have been investigated. Compared to CS counterparts, the memories with VD Au-NPs exhibit a higher dot density of 3.77 × 1011 cm-2, leading to a larger memory window. Further, the energy from valence-band edge to vacuum level (EVB-vac) of tunneling oxide for the samples with CS and VD Au-NPs is found to be 9.04 and 9.85 eV respectively. The small EVB-vac value of the memories with CS Au-NPs is resulted from the formation of a thin chemical oxide (SiOx) on thermally-grown SiO2 tunneling layer during the chemically synthesized process, contributing to a slow erasing behavior. Besides, the programming of the memories with VD Au-NPs is saturated at high gate bias, which has been well-explained by the electrons induced potential coupling between Au-NPs. Superior data retention property and high temperature dependence of charge loss are observed for the memories with CS Au-NPs, which can be ascribed to the thick tunneling oxide layer by the additional SiOx film.

AB - Carrier injection and charge loss characteristics of nonvolatile memories with chemically-synthesized (CS) and vacuum-deposited (VD) gold nanoparticles (Au-NPs) have been investigated. Compared to CS counterparts, the memories with VD Au-NPs exhibit a higher dot density of 3.77 × 1011 cm-2, leading to a larger memory window. Further, the energy from valence-band edge to vacuum level (EVB-vac) of tunneling oxide for the samples with CS and VD Au-NPs is found to be 9.04 and 9.85 eV respectively. The small EVB-vac value of the memories with CS Au-NPs is resulted from the formation of a thin chemical oxide (SiOx) on thermally-grown SiO2 tunneling layer during the chemically synthesized process, contributing to a slow erasing behavior. Besides, the programming of the memories with VD Au-NPs is saturated at high gate bias, which has been well-explained by the electrons induced potential coupling between Au-NPs. Superior data retention property and high temperature dependence of charge loss are observed for the memories with CS Au-NPs, which can be ascribed to the thick tunneling oxide layer by the additional SiOx film.

KW - Chemically-synthesized

KW - Gold nanoparticle

KW - Potential coupling

KW - Vacuum-deposited

UR - https://www.scopus.com/pages/publications/84922580292

U2 - 10.1016/j.cap.2015.02.010

DO - 10.1016/j.cap.2015.02.010

M3 - 文章

AN - SCOPUS:84922580292

SN - 1567-1739

VL - 15

SP - 535

EP - 540

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4

ER -

Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles

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Keywords

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